Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/80722
Title: Analysis of ultrahigh apparent mobility in oxide field-effect transistors
Authors: Chen, CD
Yang, BR
Li, GT
Zhou, H
Huang, BL 
Wu, Q
Zhan, RZ
Noh, YY
Minari, T
Zhang, SD
Deng, SZ
Sirringhaus, H
Liu, C
Keywords: Carrier mobility
Doping
Four-probe measurement
Surface potential scanning
Thin-film transistors
Issue Date: 2019
Publisher: Wiley-VCH
Source: Advanced science, 3 Apr. 2019, v. 6, no. 7, 1801189, p. 1-10 How to cite?
Journal: Advanced science 
Abstract: For newly developed semiconductors, obtaining high-performance transistors and identifying carrier mobility have been hot and important issues. Here, large-area fabrications and thorough analysis of InGaZnO transistors with enhanced current by simple encapsulations are reported. The enhancement in the drain current and on-off ratio is remarkable in the long-channel devices (e.g., 40 times in 200 mu m long transistors) but becomes much less pronounced in short-channel devices (e.g., 2 times in 5 mu m long transistors), which limits its application to the display industry. Combining gated four-probe measurements, scanning Kelvin-probe microscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and device simulations, it is revealed that the enhanced apparent mobility up to several tens of times is attributed to the stabilized hydrogens in the middle area forming a degenerated channel area while that near the source-drain contacts are merely doped, which causes artifact in mobility extraction. The studies demonstrate the use of hydrogens to remarkably enhance performance of oxide transistors by inducing a new mode of device operation. Also, this study shows clearly that a thorough analysis is necessary to understand the origin of very high apparent mobilities in thin-film transistors or field-effect transistors with advanced semiconductors.
URI: http://hdl.handle.net/10397/80722
ISSN: 2198-3844
DOI: 10.1002/advs.201801189
Rights: © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
The following publication Chen, C. D., Yang, B. R., Li, G., Zhou, H., Huang, B., Wu, Q., ... & Liu, C. (2019). Analysis of Ultrahigh Apparent Mobility in Oxide Field?Effect Transistors. Advanced Science, 6(7), 1801189, 1-10 is available at https://dx.doi.org/10.1002/advs.201801189
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