Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/80722
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Biology and Chemical Technology | - |
dc.contributor | Chinese Mainland Affairs Office | - |
dc.creator | Chen, CD | - |
dc.creator | Yang, BR | - |
dc.creator | Li, GT | - |
dc.creator | Zhou, H | - |
dc.creator | Huang, BL | - |
dc.creator | Wu, Q | - |
dc.creator | Zhan, RZ | - |
dc.creator | Noh, YY | - |
dc.creator | Minari, T | - |
dc.creator | Zhang, SD | - |
dc.creator | Deng, SZ | - |
dc.creator | Sirringhaus, H | - |
dc.creator | Liu, C | - |
dc.date.accessioned | 2019-05-28T01:08:53Z | - |
dc.date.available | 2019-05-28T01:08:53Z | - |
dc.identifier.issn | 2198-3844 | - |
dc.identifier.uri | http://hdl.handle.net/10397/80722 | - |
dc.language.iso | en | en_US |
dc.publisher | Wiley-VCH | en_US |
dc.rights | © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited. | en_US |
dc.rights | The following publication Chen, C. D., Yang, B. R., Li, G., Zhou, H., Huang, B., Wu, Q., ... & Liu, C. (2019). Analysis of Ultrahigh Apparent Mobility in Oxide Field?Effect Transistors. Advanced Science, 6(7), 1801189, 1-10 is available at https://dx.doi.org/10.1002/advs.201801189 | en_US |
dc.subject | Carrier mobility | en_US |
dc.subject | Doping | en_US |
dc.subject | Four-probe measurement | en_US |
dc.subject | Surface potential scanning | en_US |
dc.subject | Thin-film transistors | en_US |
dc.title | Analysis of ultrahigh apparent mobility in oxide field-effect transistors | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 10 | - |
dc.identifier.volume | 6 | - |
dc.identifier.issue | 7 | - |
dc.identifier.doi | 10.1002/advs.201801189 | - |
dcterms.abstract | For newly developed semiconductors, obtaining high-performance transistors and identifying carrier mobility have been hot and important issues. Here, large-area fabrications and thorough analysis of InGaZnO transistors with enhanced current by simple encapsulations are reported. The enhancement in the drain current and on-off ratio is remarkable in the long-channel devices (e.g., 40 times in 200 mu m long transistors) but becomes much less pronounced in short-channel devices (e.g., 2 times in 5 mu m long transistors), which limits its application to the display industry. Combining gated four-probe measurements, scanning Kelvin-probe microscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and device simulations, it is revealed that the enhanced apparent mobility up to several tens of times is attributed to the stabilized hydrogens in the middle area forming a degenerated channel area while that near the source-drain contacts are merely doped, which causes artifact in mobility extraction. The studies demonstrate the use of hydrogens to remarkably enhance performance of oxide transistors by inducing a new mode of device operation. Also, this study shows clearly that a thorough analysis is necessary to understand the origin of very high apparent mobilities in thin-film transistors or field-effect transistors with advanced semiconductors. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Advanced science, 3 Apr. 2019, v. 6, no. 7, 1801189, p. 1-10 | - |
dcterms.isPartOf | Advanced science | - |
dcterms.issued | 2019 | - |
dc.identifier.isi | WOS:000463153100020 | - |
dc.identifier.pmid | 30989018 | - |
dc.identifier.artn | 1801189 | - |
dc.description.validate | 201905 bcrc | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Chen_Analysis_Ultrahigh_Mobility.pdf | 9.21 MB | Adobe PDF | View/Open |
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