Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/65857
Title: Effect of uniaxial strain on low frequency Raman modes in few layers molybdenum disulfide
Authors: Li, Y
Lin, S
Chui, YS
Lau, SP
Issue Date: 2016
Publisher: Electrochemical Society
Source: ECS journal of solid state science and technology, 2016, v. 5, no. 11, p. Q3033-Q3037 How to cite?
Journal: ECS journal of solid state science and technology 
Abstract: The effect of uniaxial tensile strain on the shear mode (C mode) and layer breathing mode (LB mode) of few layers MoS2 were studied. The C mode is doubly degenerated into two sub-peaks as applied strain increases. No measurable Raman shift for the LB mode is observed, while its Raman intensity decreases gradually as the strain increases. In addition, the C and LB modes exhibit distinguished thickness dependence. The C mode shows a clear blueshift as the strain increases, while the LB mode is softened in the process. Moreover, the evolution of C mode with thickness follows an enhanced linear-chain model plus a linear component very well. It implies that the C mode is a better thickness navigator as compared to the L mode.
URI: http://hdl.handle.net/10397/65857
ISSN: 2162-8769
EISSN: 2162-8777
DOI: 10.1149/2.0071611jss
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