Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/65857
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorLau, SPen_US
dc.creatorChui, YSen_US
dc.creatorLin, Sen_US
dc.creatorLi, Yen_US
dc.date.accessioned2017-05-22T02:09:21Z-
dc.date.available2017-05-22T02:09:21Z-
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/10397/65857-
dc.language.isoenen_US
dc.publisherElectrochemical Societyen_US
dc.rights© 2016 The Electrochemical Society. All rights reserved.en_US
dc.rightsThis manuscript version is made available under the CC-BY-NC-ND 4.0 license (https://creativecommons.org/licenses/by-nc-nd/4.0/).en_US
dc.rightsThe following publication Li, Y., Lin, S., San Chui, Y., & Lau, S. P. (2016). Effect of uniaxial strain on low frequency Raman modes in few layers molybdenum disulfide. ECS Journal of Solid State Science and Technology, 5(11), Q3033 is available at https://doi.org/10.1149/2.0071611jss.en_US
dc.titleEffect of uniaxial strain on low frequency Raman modes in few layers molybdenum disulfideen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spageQ3033en_US
dc.identifier.epageQ3037en_US
dc.identifier.volume5en_US
dc.identifier.issue11en_US
dc.identifier.doi10.1149/2.0071611jssen_US
dcterms.abstractThe effect of uniaxial tensile strain on the shear mode (C mode) and layer breathing mode (LB mode) of few layers MoS2 were studied. The C mode is doubly degenerated into two sub-peaks as applied strain increases. No measurable Raman shift for the LB mode is observed, while its Raman intensity decreases gradually as the strain increases. In addition, the C and LB modes exhibit distinguished thickness dependence. The C mode shows a clear blueshift as the strain increases, while the LB mode is softened in the process. Moreover, the evolution of C mode with thickness follows an enhanced linear-chain model plus a linear component very well. It implies that the C mode is a better thickness navigator as compared to the L mode.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationECS journal of solid state science and technology, Jan. 2016, v. 5, no. 11, p. Q3033-Q3037en_US
dcterms.isPartOfECS journal of solid state science and technologyen_US
dcterms.issued2016-01-
dc.identifier.isiWOS:000391843700008-
dc.identifier.scopus2-s2.0-85007188781-
dc.identifier.ros2016005790-
dc.identifier.eissn2162-8777en_US
dc.identifier.rosgroupid2016005537-
dc.description.ros2016-2017 > Academic research: refereed > Publication in refereed journalen_US
dc.description.validate201804_a bcmaen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0819-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe Hong Kong Polytechnic Universityen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS6708515-
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