Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/35735
Title: Electrical transport and resistance switching characteristics of BiFeO3/Nb:SrTiO3/GaAs heterostructure fabricated by pulsed laser deposition
Authors: Huang, W
Yang, JJ
Gao, GY
Lei, Y
Zhu, J
Zeng, HZ
Zheng, FG
Hao, JH 
Issue Date: 2014
Source: Applied physics letters, 2014, v. 105, no. 6, 62904, p. 062904-1-062904-4
Abstract: BiFeO3 thin films were epitaxially grown on (001) GaAs substrate by pulsed laser deposition with Nb doped SrTiO3 as a buffer layer. Piezoresponse force microscopy images exhibit effective ferroelectric switching of the heterostructure. The temperature-dependent current-voltage characteristics of the heterostructure reveal a resistance switching phenomenon and diode-like behavior with a rectifying ratio of 2 x 10(2) at the applied voltage of +/- 13.4 V. The electrical transport mechanism in the heterostructure has been illustrated by constructing the energy band structure. In addition, the resistance switching behavior in the heterostructure could be explained by the polarization modulation of the depletion region at the interface of the semiconductor and the ferroelectric layers.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4890115
Rights: © 2014 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in W. Huang et al., Appl. Phys. Lett. 105, 062904 (2014) and may be found at https://dx.doi.org/10.1063/1.4890115
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