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2020-03-13T00:03:38-07:00Arbortext Advanced Print Publisher 9.0.114/W2014-08-13T07:55:41+05:30
aip.orgtrue10.1063/1.48901152014-08-13Electrical transport and resistance switching characteristics of BiFeO3/Nb:SrTiO3/GaAs heterostructure fabricated by pulsed laser deposition
10.1063/1.4890115http://dx.doi.org/10.1063/1.4890115
doi:10.1063/1.4890115Electrical transport and resistance switching characteristics of BiFeO3/Nb:SrTiO3/GaAs heterostructure fabricated by pulsed laser depositionW. HuangJ. J. YangG. Y. GaoY. LeiJ. ZhuH. Z. ZengF. G. ZhengJ. H. Haoband structurebismuth compoundsbuffer layerselectric resistanceepitaxial growthferroelectric semiconductorsferroelectric switchingferroelectric thin filmsmultiferroicsniobiump-n heterojunctionspulsed laser depositionrectificationsemiconductor epitaxial layerssemiconductor growthstrontium compounds
2014-08-13trueaip.org10.1063/1.4890115
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