Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/35735
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorHuang, W-
dc.creatorYang, JJ-
dc.creatorGao, GY-
dc.creatorLei, Y-
dc.creatorZhu, J-
dc.creatorZeng, HZ-
dc.creatorZheng, FG-
dc.creatorHao, JH-
dc.date.accessioned2016-04-15T08:35:24Z-
dc.date.available2016-04-15T08:35:24Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/35735-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2014 AIP Publishing LLC.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in W. Huang et al., Appl. Phys. Lett. 105, 062904 (2014) and may be found at https://dx.doi.org/10.1063/1.4890115en_US
dc.titleElectrical transport and resistance switching characteristics of BiFeO3/Nb:SrTiO3/GaAs heterostructure fabricated by pulsed laser depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume105-
dc.identifier.issue6-
dc.identifier.doi10.1063/1.4890115-
dcterms.abstractBiFeO3 thin films were epitaxially grown on (001) GaAs substrate by pulsed laser deposition with Nb doped SrTiO3 as a buffer layer. Piezoresponse force microscopy images exhibit effective ferroelectric switching of the heterostructure. The temperature-dependent current-voltage characteristics of the heterostructure reveal a resistance switching phenomenon and diode-like behavior with a rectifying ratio of 2 x 10(2) at the applied voltage of +/- 13.4 V. The electrical transport mechanism in the heterostructure has been illustrated by constructing the energy band structure. In addition, the resistance switching behavior in the heterostructure could be explained by the polarization modulation of the depletion region at the interface of the semiconductor and the ferroelectric layers.-
dcterms.bibliographicCitationApplied physics letters, 2014, v. 105, no. 6, 62904, p. 062904-1-062904-4-
dcterms.isPartOfApplied physics letters-
dcterms.issued2014-
dc.identifier.isiWOS:000341188700057-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupid2014004456-
dc.description.ros2014-2015 > Academic research: refereed > Publication in refereed journal-
dc.description.oapublished_final-
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