Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/35735
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Huang, W | - |
dc.creator | Yang, JJ | - |
dc.creator | Gao, GY | - |
dc.creator | Lei, Y | - |
dc.creator | Zhu, J | - |
dc.creator | Zeng, HZ | - |
dc.creator | Zheng, FG | - |
dc.creator | Hao, JH | - |
dc.date.accessioned | 2016-04-15T08:35:24Z | - |
dc.date.available | 2016-04-15T08:35:24Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/35735 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2014 AIP Publishing LLC. | en_US |
dc.rights | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in W. Huang et al., Appl. Phys. Lett. 105, 062904 (2014) and may be found at https://dx.doi.org/10.1063/1.4890115 | en_US |
dc.title | Electrical transport and resistance switching characteristics of BiFeO3/Nb:SrTiO3/GaAs heterostructure fabricated by pulsed laser deposition | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 105 | - |
dc.identifier.issue | 6 | - |
dc.identifier.doi | 10.1063/1.4890115 | - |
dcterms.abstract | BiFeO3 thin films were epitaxially grown on (001) GaAs substrate by pulsed laser deposition with Nb doped SrTiO3 as a buffer layer. Piezoresponse force microscopy images exhibit effective ferroelectric switching of the heterostructure. The temperature-dependent current-voltage characteristics of the heterostructure reveal a resistance switching phenomenon and diode-like behavior with a rectifying ratio of 2 x 10(2) at the applied voltage of +/- 13.4 V. The electrical transport mechanism in the heterostructure has been illustrated by constructing the energy band structure. In addition, the resistance switching behavior in the heterostructure could be explained by the polarization modulation of the depletion region at the interface of the semiconductor and the ferroelectric layers. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 2014, v. 105, no. 6, 62904, p. 062904-1-062904-4 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2014 | - |
dc.identifier.isi | WOS:000341188700057 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | 2014004456 | - |
dc.description.ros | 2014-2015 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Huang_Electrical_Transport_Resistance.pdf | 1.18 MB | Adobe PDF | View/Open |
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