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Title: Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications
Authors: Zhang, Y
Shao, YY
Lu, XB
Zeng, M
Zhang, Z
Gao, XS
Zhang, XJ
Liu, JM
Dai, JY 
Issue Date: 2014
Source: Applied physics letters, 2014, v. 105, no. 17, 172902, p. 172902-1-172902-5
Abstract: In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO2-Si (MHOS) structure. The devices based on 800 degrees C annealed HfO2 film exhibit a large memory window of similar to 5.1V under +/- 10V sweeping voltages and excellent charge retention properties with only small charge loss of similar to 2.6% after more than 10 4 s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO2 films. We investigated the defect states in the HfO2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO2 based MHOS devices.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4900745
Rights: © 2014 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Y. Zhang et al., Appl. Phys. Lett. 105, 172902 (2014) and may be found at
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