Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/35734
Title: Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications
Authors: Zhang, Y
Shao, YY
Lu, XB
Zeng, M
Zhang, Z
Gao, XS
Zhang, XJ
Liu, JM
Dai, JY 
Issue Date: 2014
Publisher: American Institute of Physics
Source: Applied physics letters, 2014, v. 105, no. 17, 172902 How to cite?
Journal: Applied physics letters 
Abstract: In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO2-Si (MHOS) structure. The devices based on 800 degrees C annealed HfO2 film exhibit a large memory window of similar to 5.1V under +/- 10V sweeping voltages and excellent charge retention properties with only small charge loss of similar to 2.6% after more than 10 4 s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO2 films. We investigated the defect states in the HfO2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO2 based MHOS devices.
URI: http://hdl.handle.net/10397/35734
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.4900745
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