Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/35734
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Zhang, Y | - |
dc.creator | Shao, YY | - |
dc.creator | Lu, XB | - |
dc.creator | Zeng, M | - |
dc.creator | Zhang, Z | - |
dc.creator | Gao, XS | - |
dc.creator | Zhang, XJ | - |
dc.creator | Liu, JM | - |
dc.creator | Dai, JY | - |
dc.date.accessioned | 2016-04-15T08:35:23Z | - |
dc.date.available | 2016-04-15T08:35:23Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/35734 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2014 AIP Publishing LLC. | en_US |
dc.rights | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Y. Zhang et al., Appl. Phys. Lett. 105, 172902 (2014) and may be found at https://dx.doi.org/10.1063/1.4900745 | en_US |
dc.title | Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 105 | - |
dc.identifier.issue | 17 | - |
dc.identifier.doi | 10.1063/1.4900745 | - |
dcterms.abstract | In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO2-Si (MHOS) structure. The devices based on 800 degrees C annealed HfO2 film exhibit a large memory window of similar to 5.1V under +/- 10V sweeping voltages and excellent charge retention properties with only small charge loss of similar to 2.6% after more than 10 4 s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO2 films. We investigated the defect states in the HfO2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO2 based MHOS devices. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 2014, v. 105, no. 17, 172902, p. 172902-1-172902-5 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2014 | - |
dc.identifier.isi | WOS:000344588600043 | - |
dc.identifier.scopus | 2-s2.0-84908439442 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | 2014000051 | - |
dc.description.ros | 2014-2015 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Zhang_Defect_States_Charge.pdf | 3.69 MB | Adobe PDF | View/Open |
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