Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/35734
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorZhang, Y-
dc.creatorShao, YY-
dc.creatorLu, XB-
dc.creatorZeng, M-
dc.creatorZhang, Z-
dc.creatorGao, XS-
dc.creatorZhang, XJ-
dc.creatorLiu, JM-
dc.creatorDai, JY-
dc.date.accessioned2016-04-15T08:35:23Z-
dc.date.available2016-04-15T08:35:23Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/35734-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2014 AIP Publishing LLC.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Y. Zhang et al., Appl. Phys. Lett. 105, 172902 (2014) and may be found at https://dx.doi.org/10.1063/1.4900745en_US
dc.titleDefect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applicationsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume105-
dc.identifier.issue17-
dc.identifier.doi10.1063/1.4900745-
dcterms.abstractIn this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO2-Si (MHOS) structure. The devices based on 800 degrees C annealed HfO2 film exhibit a large memory window of similar to 5.1V under +/- 10V sweeping voltages and excellent charge retention properties with only small charge loss of similar to 2.6% after more than 10 4 s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO2 films. We investigated the defect states in the HfO2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO2 based MHOS devices.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 2014, v. 105, no. 17, 172902, p. 172902-1-172902-5-
dcterms.isPartOfApplied physics letters-
dcterms.issued2014-
dc.identifier.isiWOS:000344588600043-
dc.identifier.scopus2-s2.0-84908439442-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupid2014000051-
dc.description.ros2014-2015 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
Zhang_Defect_States_Charge.pdf3.69 MBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

150
Last Week
0
Last month
Citations as of Mar 24, 2024

Downloads

272
Citations as of Mar 24, 2024

SCOPUSTM   
Citations

55
Last Week
0
Last month
Citations as of Mar 28, 2024

WEB OF SCIENCETM
Citations

46
Last Week
0
Last month
Citations as of Mar 28, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.