Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/99796
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Title: Reversible semimetal-semiconductor transition of unconventional-phase WS2 nanosheets
Authors: Zhai, W
Qi, J
Xu, C 
Chen, B
Li, Z
Wang, Y
Zhai, L
Yao, Y
Li, S
Zhang, Q
Ge, Y
Chi, B
Ren, Y
Huang, Z
Lai, Z 
Gu, L
Zhu, Y 
He, Q
Zhang, H
Issue Date: Jun-2023
Source: Journal of the American Chemical Society, 21 June 2023, v. 145, no. 24, p. 13444-13451
Abstract: Phase transition with band gap modulation of materials has gained intensive research attention due to its various applications, including memories, neuromorphic computing, and transistors. As a powerful strategy to tune the crystal phase of transition-metal dichalcogenides (TMDs), the phase transition of TMDs provides opportunities to prepare new phases of TMDs for exploring their phase-dependent property, function, and application. However, the previously reported phase transition of TMDs is mainly irreversible. Here, we report a reversible phase transition in the semimetallic 1T′-WS2 driven by proton intercalation and deintercalation, resulting in a newly discovered semiconducting WS2 with a novel unconventional phase, denoted as the 1T′d phase. Impressively, an on/off ratio of >106 has been achieved during the phase transition of WS2 from the semimetallic 1T′ phase to the semiconducting 1T′d phase. Our work not only provides a unique insight into the phase transition of TMDs via proton intercalation but also opens up possibilities to tune their physicochemical properties for various applications.
Publisher: American Chemical Society
Journal: Journal of the American Chemical Society 
ISSN: 0002-7863
EISSN: 1520-5126
DOI: 10.1021/jacs.3c03776
Rights: © 2023 American Chemical Society
This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of the American Chemical Society, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/jacs.3c03776.
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