Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/99796
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physicsen_US
dc.contributorResearch Institute for Smart Energyen_US
dc.creatorZhai, Wen_US
dc.creatorQi, Jen_US
dc.creatorXu, Cen_US
dc.creatorChen, Ben_US
dc.creatorLi, Zen_US
dc.creatorWang, Yen_US
dc.creatorZhai, Len_US
dc.creatorYao, Yen_US
dc.creatorLi, Sen_US
dc.creatorZhang, Qen_US
dc.creatorGe, Yen_US
dc.creatorChi, Ben_US
dc.creatorRen, Yen_US
dc.creatorHuang, Zen_US
dc.creatorLai, Zen_US
dc.creatorGu, Len_US
dc.creatorZhu, Yen_US
dc.creatorHe, Qen_US
dc.creatorZhang, Hen_US
dc.date.accessioned2023-07-21T01:07:26Z-
dc.date.available2023-07-21T01:07:26Z-
dc.identifier.issn0002-7863en_US
dc.identifier.urihttp://hdl.handle.net/10397/99796-
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.rights© 2023 American Chemical Societyen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of the American Chemical Society, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/jacs.3c03776.en_US
dc.titleReversible semimetal-semiconductor transition of unconventional-phase WS2 nanosheetsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage13444en_US
dc.identifier.epage13451en_US
dc.identifier.volume145en_US
dc.identifier.issue24en_US
dc.identifier.doi10.1021/jacs.3c03776en_US
dcterms.abstractPhase transition with band gap modulation of materials has gained intensive research attention due to its various applications, including memories, neuromorphic computing, and transistors. As a powerful strategy to tune the crystal phase of transition-metal dichalcogenides (TMDs), the phase transition of TMDs provides opportunities to prepare new phases of TMDs for exploring their phase-dependent property, function, and application. However, the previously reported phase transition of TMDs is mainly irreversible. Here, we report a reversible phase transition in the semimetallic 1T′-WS2 driven by proton intercalation and deintercalation, resulting in a newly discovered semiconducting WS2 with a novel unconventional phase, denoted as the 1T′d phase. Impressively, an on/off ratio of >106 has been achieved during the phase transition of WS2 from the semimetallic 1T′ phase to the semiconducting 1T′d phase. Our work not only provides a unique insight into the phase transition of TMDs via proton intercalation but also opens up possibilities to tune their physicochemical properties for various applications.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of the American Chemical Society, 21 June 2023, v. 145, no. 24, p. 13444-13451en_US
dcterms.isPartOfJournal of the American Chemical Societyen_US
dcterms.issued2023-06-
dc.identifier.scopus2-s2.0-85163841466-
dc.identifier.pmid37279025-
dc.identifier.eissn1520-5126en_US
dc.description.validate202307 bcwwen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumbera2313-
dc.identifier.SubFormID47475-
dc.description.fundingSourceRGCen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryGreen (AAM)en_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
Zhai_Reversible_Semimetal-semiconductor_Transition.pdfPre-Published version1.59 MBAdobe PDFView/Open
Open Access Information
Status open access
File Version Final Accepted Manuscript
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

126
Citations as of Nov 10, 2025

Downloads

139
Citations as of Nov 10, 2025

SCOPUSTM   
Citations

22
Citations as of Dec 19, 2025

WEB OF SCIENCETM
Citations

24
Citations as of Dec 18, 2025

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.