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Title: | Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS 2 and ultra high-k gate dielectric PZT | Authors: | Zhou, C Wang, X Raju, S Lin, Z Villaroman, D Huang, B Chan, HLW Chan, M Chai, Y |
Issue Date: | 21-May-2015 | Source: | Nanoscale, 21 May 2015, v. 7, no. 19, p. 8695-8700 | Abstract: | MoS2 and other atomic-level thick layered materials have been shown to have a high potential for outperforming Si transistors at the scaling limit. In this work, we demonstrate a MoS2 transistor with a low voltage and high ON/OFF ratio. A record small equivalent oxide thickness of ∼1.1 nm has been obtained by using ultra high-k gate dielectric Pb(Zr0.52Ti0.48)O3. The low threshold voltage (<0.5 V) is comparable to that of the liquid/gel gated MoS2 transistor. The small sub-threshold swing of 85.9 mV dec-1, the high ON/OFF ratio of ∼108 and the negligible hysteresis ensure a high performance of the MoS2 transistor operating at 1 V. The extracted field-effect mobility of 1-10 cm2 V-1 s-1 suggests a high crystalline quality of the CVD-grown MoS2 flakes. The combination of the two-dimensional layered semiconductor and the ultra high-k dielectric may enable the development of low-power electronic applications. This journal is | Publisher: | Royal Society of Chemistry | Journal: | Nanoscale | ISSN: | 2040-3364 | EISSN: | 2040-3372 | DOI: | 10.1039/c5nr01072a | Rights: | This journal is © The Royal Society of Chemistry 2015 The following publication Zhou, C., Wang, X., Raju, S., Lin, Z., Villaroman, D., Huang, B., ... & Chai, Y. (2015). Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS 2 and ultra high-k gate dielectric PZT. Nanoscale, 7(19), 8695-8700 is available at https://doi.org/10.1039/c5nr01072a. |
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