Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/95713
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | en_US |
dc.creator | Wong, HF | en_US |
dc.creator | Ng, SM | en_US |
dc.creator | Liu, YK | en_US |
dc.creator | Lam, KK | en_US |
dc.creator | Chan, KH | en_US |
dc.creator | Cheng, WF | en_US |
dc.creator | von Nordheim, D | en_US |
dc.creator | Mak, CL | en_US |
dc.creator | Ploss, B | en_US |
dc.creator | Leung, CW | en_US |
dc.date.accessioned | 2022-10-05T03:55:32Z | - |
dc.date.available | 2022-10-05T03:55:32Z | - |
dc.identifier.issn | 0018-9464 | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/95713 | - |
dc.language.iso | en | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
dc.rights | © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | en_US |
dc.rights | The following publication H. F. Wong et al., "Gate-Controlled Transport Properties in Dilute Magnetic Semiconductor (Zn, Mn)O Thin Films," in IEEE Transactions on Magnetics, vol. 54, no. 11, pp. 1-4, Nov. 2018, Art no. 4200104 is available at https://doi.org/10.1109/TMAG.2018.2850067 | en_US |
dc.subject | Dilute magnetic semiconductor (DMS) and magnetism | en_US |
dc.subject | Electric effect | en_US |
dc.subject | Mn-doped ZnO (MZO) | en_US |
dc.title | Gate-controlled transport properties in dilute magnetic semiconductor (Zn, Mn)O thin films | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 54 | en_US |
dc.identifier.issue | 11 | en_US |
dc.identifier.doi | 10.1109/TMAG.2018.2850067 | en_US |
dcterms.abstract | Ionic liquid (IL) gating of functional oxides has drawn significant attention, since it can provide reversible changes in carrier concentration (1014 cm-2) at the interface, permitting the manipulation of electrical and magnetic properties of oxide films with low voltages. In this paper, we demonstrated the electric-field manipulation of transport properties in the dilute magnetic semiconductor of Zn0.98Mn0.02O (MZO), using an electric-double-layer transistor geometry through the IL electrolyte gating. The MZO layer exhibited reversible control of resistance up to 33% at 230 K. Moreover, magnetoresistance (MR) measurements revealed the influence of applied gate voltage (Vg) on the magnetotransport behavior, which exhibited a positive MR in the low-field region and a negative MR in high magnetic field (up to 9 T). An increase in low-field positive MR (<1 T) upon switching Vg from-2 to 2 V implied an enhanced ferromagnetic state of MZO due to an increased electron carrier concentration. The results demonstrated that a controllable carrier concentration by electric-field effect played an important role in the manipulation of magnetism in MZO. | en_US |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | IEEE transactions on magnetics, Nov. 2018, v. 54, no. 11, 4200104 | en_US |
dcterms.isPartOf | IEEE transactions on magnetics | en_US |
dcterms.issued | 2018-11 | - |
dc.identifier.scopus | 2-s2.0-85050393499 | - |
dc.identifier.eissn | 1941-0069 | en_US |
dc.identifier.artn | 4200104 | en_US |
dc.description.validate | 202210 bcfc | en_US |
dc.description.oa | Accepted Manuscript | en_US |
dc.identifier.FolderNumber | AP-0428 | - |
dc.description.fundingSource | RGC | en_US |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | The Hong Kong Polytechnic University | en_US |
dc.description.pubStatus | Published | en_US |
dc.identifier.OPUS | 24266179 | - |
dc.description.oaCategory | Green (AAM) | en_US |
Appears in Collections: | Journal/Magazine Article |
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Wong_Gate-Controlled_Transport_Properties.pdf | Pre-Published version | 278.01 kB | Adobe PDF | View/Open |
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