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http://hdl.handle.net/10397/95710
Title: | Modulating antiferromagnetic La₀.₃₅Sr₀.₆₅ MnO₃ via low-voltage pulsing across a ferroelectric copolymer gate dielectric | Authors: | Zhao, XW Wong, HF Liu, YK Ng, SM Liang, JM Lam, KK Cheng, WF Mak, CL Leung, CW |
Issue Date: | Feb-2022 | Source: | IEEE transactions on magnetics, Feb. 2022, v. 58, no. 2, 4200205 | Abstract: | Electric-field-based modulation is a promising way for realizing ultrafast and high-density antiferromagnetic spintronics. Here, we investigate a low-voltage pulse modulation of antiferromagnetic La1-xSrxMnO₃ ( x =0.65 ) (AF-LSMO) thin films. Positive voltage pulses can increase the resistance at low temperatures, which is ascribed to the oxygen vacancies induced by positive voltage pulses. This effect is supported by X-ray photoelectron spectroscopy (XPS) results. Using low-voltage pulses, we demonstrate exchange bias modulation in ferromagnetic La₀.₇Sr₀.₃MnO₃ (FM-LSMO)/AF-LSMO bilayer structure. Temperature-dependent resistance, exchange bias field and coercivity all show voltage-polarity dependence. While positive pulses can induce significant changes in the AF-LSMO, negative pulsing has little impact and is consistent with oxygen vacancy related process observed in various electrochemical reaction systems. Our findings can find potential for exploring electric-field modification of antiferromagnetic spintronics. | Keywords: | Antiferromagnetic La0.35Sr0.65MnO3(AF-LSMO) thin film Antiferromagnetism Ferroelectric copolymer Low-voltage pulses |
Publisher: | Institute of Electrical and Electronics Engineers | Journal: | IEEE transactions on magnetics | ISSN: | 0018-9464 | EISSN: | 1941-0069 | DOI: | 10.1109/TMAG.2021.3085364 | Rights: | © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The following publication X. W. Zhao et al., "Modulating Antiferromagnetic La0.35Sr0.65 MnO3 via Low-Voltage Pulsing Across a Ferroelectric Copolymer Gate Dielectric," in IEEE Transactions on Magnetics, vol. 58, no. 2, pp. 1-5, Feb. 2022, Art no. 4200205 is available at https://doi.org/10.1109/TMAG.2021.3085364 |
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