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Title: Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm
Authors: Zeng, LH 
Lin, SH 
Lou, ZH
Yuan, HY 
Long, H 
Li, YY 
Lu, W 
Lau, SP 
Wu, D
Tsang, YH 
Issue Date: 2018
Source: NPG Asia materials, 25 Apr. 2018, v. 10, p. 352-362
Abstract: The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe2 have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe2 photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe2 films by simple selenization method for the design of a PtSe2/Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 x 10(13) Jones at -5 V and fast rise/fall times of 10.1/19.5 mu s at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe2 with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe2/Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices.
Publisher: Nature Publishing Group
Journal: NPG Asia materials 
ISSN: 1884-4049
EISSN: 1884-4057
DOI: 10.1038/s41427-018-0035-4
Rights: © The Author(s) 2018
Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the articles Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the articles Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit
The following publication Zeng, L. H., Lin, S. H., Lou, Z. H., Yuan, H. Y., Long, H., Li, Y. Y., … & Tsang, Y. H. (2018). Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm. NPG Asia Materials, 10, 352-362 is available at
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