Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/79602
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dc.contributorDepartment of Applied Physics-
dc.contributorChinese Mainland Affairs Office-
dc.contributorMaterials Research Centre-
dc.creatorZeng, LH-
dc.creatorLin, SH-
dc.creatorLou, ZH-
dc.creatorYuan, HY-
dc.creatorLong, H-
dc.creatorLi, YY-
dc.creatorLu, W-
dc.creatorLau, SP-
dc.creatorWu, D-
dc.creatorTsang, YH-
dc.date.accessioned2018-12-21T07:12:43Z-
dc.date.available2018-12-21T07:12:43Z-
dc.identifier.issn1884-4049en_US
dc.identifier.urihttp://hdl.handle.net/10397/79602-
dc.language.isoenen_US
dc.publisherNature Publishing Groupen_US
dc.rights© The Author(s) 2018en_US
dc.rightsOpen Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the articles Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the articles Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.en_US
dc.rightsThe following publication Zeng, L. H., Lin, S. H., Lou, Z. H., Yuan, H. Y., Long, H., Li, Y. Y., … & Tsang, Y. H. (2018). Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm. NPG Asia Materials, 10, 352-362 is available at https://dx.doi.org/10.1038/s41427-018-0035-4en_US
dc.titleUltrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nmen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage352en_US
dc.identifier.epage362en_US
dc.identifier.volume10en_US
dc.identifier.doi10.1038/s41427-018-0035-4en_US
dcterms.abstractThe newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe2 have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe2 photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe2 films by simple selenization method for the design of a PtSe2/Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 x 10(13) Jones at -5 V and fast rise/fall times of 10.1/19.5 mu s at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe2 with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe2/Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationNPG Asia materials, 25 Apr. 2018, v. 10, p. 352-362-
dcterms.isPartOfNPG Asia materials-
dcterms.issued2018-
dc.identifier.isiWOS:000438884200001-
dc.identifier.eissn1884-4057en_US
dc.identifier.rosgroupid2017002602-
dc.description.ros2017-2018 > Academic research: refereed > Publication in refereed journal-
dc.description.validate201812 bcrcen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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