Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5868
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Title: Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO₃ thin films
Authors: Au, K
Gao, XS
Wang, J
Bao, ZY
Liu, JM
Dai, J 
Issue Date: 14-Jul-2013
Source: Journal of applied physics, 14 July, 2013, v. 114, no. 2, 027019, p. 1-4
Abstract: Ag nanoparticle (NP) embedded BaTiO₃ (BTO) thin films on SrRuO₃-coated SrTiO₃ (STO) substrates are prepared by the integrated nanocluster beam deposition and laser-molecular beam epitaxy. Enhanced resistive switching, up to an ON/OFF ration of 10⁴, has been achieved at low switching voltage (less than 1 V) without a forming voltage. These characteristics make such nanocomposite film very promising for application of low voltage non-volatile random access memory. The enhanced resistive switching effect may be attributed to the charge storage effect of the Ag nanoparticles and easy formation of Ag filament inside the BTO film.
Keywords: Barium compounds
Electrical conductivity transitions
Electrical resistivity
Epitaxial layers
Molecular beam epitaxial growth
Nanocomposites
Nanofabrication
Nanoparticles
Pulsed laser deposition
Silver
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.4812219
Rights: © 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K. Au et al., J. Appl. Phys. 114, 027019 (2013) and may be found at http://link.aip.org/link/?jap/114/027019.
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