Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5868
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dc.contributorDepartment of Applied Physics-
dc.creatorAu, K-
dc.creatorGao, XS-
dc.creatorWang, J-
dc.creatorBao, ZY-
dc.creatorLiu, JM-
dc.creatorDai, J-
dc.date.accessioned2014-12-11T08:27:51Z-
dc.date.available2014-12-11T08:27:51Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/5868-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K. Au et al., J. Appl. Phys. 114, 027019 (2013) and may be found at http://link.aip.org/link/?jap/114/027019.en_US
dc.subjectBarium compoundsen_US
dc.subjectElectrical conductivity transitionsen_US
dc.subjectElectrical resistivityen_US
dc.subjectEpitaxial layersen_US
dc.subjectMolecular beam epitaxial growthen_US
dc.subjectNanocompositesen_US
dc.subjectNanofabricationen_US
dc.subjectNanoparticlesen_US
dc.subjectPulsed laser depositionen_US
dc.subjectSilveren_US
dc.titleEnhanced resistive switching effect in Ag nanoparticle embedded BaTiO₃ thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: J. Y. Daien_US
dc.description.otherinformationSPECIAL TOPIC: Selected Papers from the International Symposium on Integrated Functionalities 2012, Hong Kong, June 17-21, 2012en_US
dc.identifier.spage1-
dc.identifier.epage4-
dc.identifier.volume114-
dc.identifier.issue2-
dc.identifier.doi10.1063/1.4812219-
dcterms.abstractAg nanoparticle (NP) embedded BaTiO₃ (BTO) thin films on SrRuO₃-coated SrTiO₃ (STO) substrates are prepared by the integrated nanocluster beam deposition and laser-molecular beam epitaxy. Enhanced resistive switching, up to an ON/OFF ration of 10⁴, has been achieved at low switching voltage (less than 1 V) without a forming voltage. These characteristics make such nanocomposite film very promising for application of low voltage non-volatile random access memory. The enhanced resistive switching effect may be attributed to the charge storage effect of the Ag nanoparticles and easy formation of Ag filament inside the BTO film.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 14 July, 2013, v. 114, no. 2, 027019, p. 1-4-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2013-07-14-
dc.identifier.isiWOS:000321761600083-
dc.identifier.scopus2-s2.0-84880345552-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr68214-
dc.description.ros2013-2014 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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