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| Title: | Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films | Authors: | Wang, XL Luan, CY Shao, Q Pruna, A Leung, CW Lortz, R Zapien, JA Ruotolo, A |
Issue Date: | 11-Mar-2013 | Source: | Applied physics letters, 11 Mar. 2013, v. 102, no. 10, 102112, p. 1-4 | Abstract: | Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO. | Keywords: | Energy gap Exchange interactions (electron) II-VI semiconductors Magnetic moments Manganese Red shift Semiconductor thin films Semimagnetic semiconductors Wide band gap semiconductors Zinc compounds |
Publisher: | American Institute of Physics | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | DOI: | 10.1063/1.4795797 | Rights: | © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Wang, X. L. et al., Appl. Phys. Lett. 102, 102112 (2013) and may be found at http://link.aip.org/link/?apl/102/102112 |
| Appears in Collections: | Journal/Magazine Article |
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| Wang_effect_magnetic_order.pdf | 808.72 kB | Adobe PDF | View/Open |
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