Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5865
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dc.contributorDepartment of Applied Physics-
dc.creatorWang, XL-
dc.creatorLuan, CY-
dc.creatorShao, Q-
dc.creatorPruna, A-
dc.creatorLeung, CW-
dc.creatorLortz, R-
dc.creatorZapien, JA-
dc.creatorRuotolo, A-
dc.date.accessioned2014-12-11T08:23:44Z-
dc.date.available2014-12-11T08:23:44Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/5865-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Wang, X. L. et al., Appl. Phys. Lett. 102, 102112 (2013) and may be found at http://link.aip.org/link/?apl/102/102112en_US
dc.subjectEnergy gapen_US
dc.subjectExchange interactions (electron)en_US
dc.subjectII-VI semiconductorsen_US
dc.subjectMagnetic momentsen_US
dc.subjectManganeseen_US
dc.subjectRed shiften_US
dc.subjectSemiconductor thin filmsen_US
dc.subjectSemimagnetic semiconductorsen_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectZinc compoundsen_US
dc.titleEffect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: Ruotolo A.en_US
dc.identifier.spage1-
dc.identifier.epage4-
dc.identifier.volume102-
dc.identifier.issue10-
dc.identifier.doi10.1063/1.4795797-
dcterms.abstractExchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 11 Mar. 2013, v. 102, no. 10, 102112, p. 1-4-
dcterms.isPartOfApplied physics letters-
dcterms.issued2013-03-11-
dc.identifier.isiWOS:000316501200039-
dc.identifier.scopus2-s2.0-84875132823-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr65364-
dc.description.ros2012-2013 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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