Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5855
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Title: Application of a graphene buffer layer for the growth of high quality SnS films on GaAs (100) substrate
Authors: Wang, W
Leung, KK
Fong, WKP
Wang, SF
Hui, YY
Lau, SP 
Surya, C 
Issue Date: Jun-2012
Source: 2012 38th IEEE Photovoltaic Specialists Conference (PVSC) : [proceedings], p. 2614-2616
Abstract: Tin mono-sulfide (SnS) thin films have been grown by molecular beam epitaxy (MBE) on two different substrates, GaAs (100) and soda lime glass at 400°C. High resolution X-ray Diffraction (HXRD) and Scanning Electron Microscopy (SEM) are used to characterize the structural properties of the as grown SnS films. By introducing a graphene buffer layer between the SnS thin film and the substrate, the XRD rocking curve's full width at half maximum (FWHM) of the SnS film grown on GaAs (100) and soda lime glass decrease from 2.92° to 0.37° and from 6.58° to 2.04° respectively, indicating a significant improvement of SnS thin films.
Keywords: Scanning electron microscopy
X-ray diffraction
Molecular beam epitaxy
Graphene
Gallium arsenide
Publisher: IEEE
ISBN: 978-1-4673-0064-3 (print)
ISSN: 0160-8371
DOI: 10.1109/PVSC.2012.6318130
Rights: ©2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
The following article "Wang, W., Leung, K. K., Fong, W. K., Wang, S. F., Hui, Y. Y., Lau, S. P., & Surya, C. (2012). Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate. Paper presented at the Conference Record of the IEEE Photovoltaic Specialists Conference, 2614-2616" is available at http://dx.doi.org/10.1109/PVSC.2012.6318130
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