Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5855
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dc.contributorDepartment of Applied Physics-
dc.contributorDepartment of Electronic and Information Engineering-
dc.creatorWang, W-
dc.creatorLeung, KK-
dc.creatorFong, WKP-
dc.creatorWang, SF-
dc.creatorHui, YY-
dc.creatorLau, SP-
dc.creatorSurya, C-
dc.date.accessioned2014-12-11T08:23:56Z-
dc.date.available2014-12-11T08:23:56Z-
dc.identifier.isbn978-1-4673-0064-3 (print)-
dc.identifier.issn0160-8371-
dc.identifier.urihttp://hdl.handle.net/10397/5855-
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.rights©2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en_US
dc.rightsThe following article "Wang, W., Leung, K. K., Fong, W. K., Wang, S. F., Hui, Y. Y., Lau, S. P., & Surya, C. (2012). Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate. Paper presented at the Conference Record of the IEEE Photovoltaic Specialists Conference, 2614-2616" is available at http://dx.doi.org/10.1109/PVSC.2012.6318130en_US
dc.subjectScanning electron microscopyen_US
dc.subjectX-ray diffractionen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectGrapheneen_US
dc.subjectGallium arsenideen_US
dc.titleApplication of a graphene buffer layer for the growth of high quality SnS films on GaAs (100) substrateen_US
dc.typeConference Paperen_US
dc.description.otherinformationAuthor name used in this manuscript: W. K. Fongen_US
dc.description.otherinformationAuthor name used in this manuscript: C. Suryaen_US
dc.description.otherinformationRefereed conference paperen_US
dc.identifier.doi10.1109/PVSC.2012.6318130-
dcterms.abstractTin mono-sulfide (SnS) thin films have been grown by molecular beam epitaxy (MBE) on two different substrates, GaAs (100) and soda lime glass at 400°C. High resolution X-ray Diffraction (HXRD) and Scanning Electron Microscopy (SEM) are used to characterize the structural properties of the as grown SnS films. By introducing a graphene buffer layer between the SnS thin film and the substrate, the XRD rocking curve's full width at half maximum (FWHM) of the SnS film grown on GaAs (100) and soda lime glass decrease from 2.92° to 0.37° and from 6.58° to 2.04° respectively, indicating a significant improvement of SnS thin films.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitation2012 38th IEEE Photovoltaic Specialists Conference (PVSC) : [proceedings], p. 2614-2616-
dcterms.issued2012-06-
dc.identifier.isiWOS:000309917802205-
dc.identifier.scopus2-s2.0-84869419497-
dc.identifier.rosgroupidr58273-
dc.description.ros2011-2012 > Academic research: refereed > Refereed conference paper-
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryGreen (AAM)en_US
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