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http://hdl.handle.net/10397/4790
Title: | Unification of bulk and interface electroresistive switching in oxide systems | Authors: | Ruotolo, A Leung, CW Lam, CY Cheng, WF Wong, KH |
Issue Date: | 15-Jun-2008 | Source: | Physical review. B, Condensed matter and materials physics, 15 June 2008, v. 77, no. 23, 233103, p. 1-4 | Abstract: | We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region. | Keywords: | Dielectric hysteresis Ferroelectric switching Impact ionisation Lanthanum compounds Negative resistance Permittivity Schottky barriers Strontium compounds Titanium compounds |
Publisher: | American Physical Society | Journal: | Physical review. B, Condensed matter and materials physics | ISSN: | 1098-0121 | EISSN: | 1550-235X | DOI: | 10.1103/PhysRevB.77.233103 | Rights: | Physical Review B © 2008 The American Physical Society. The Journal's web site is located at http://prb.aps.org/ |
Appears in Collections: | Journal/Magazine Article |
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Ruotolo_Bulk_Interface_Electroresistive.pdf | 326.99 kB | Adobe PDF | View/Open |
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