Unification of bulk and interface electroresistive switching in oxide systems

Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4790

Title:	Unification of bulk and interface electroresistive switching in oxide systems
Authors:	Ruotolo, A Leung, CW Lam, CY Cheng, WF Wong, KH
Issue Date:	15-Jun-2008
Source:	Physical review. B, Condensed matter and materials physics, 15 June 2008, v. 77, no. 23, 233103, p. 1-4
Abstract:	We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.
Keywords:	Dielectric hysteresis Ferroelectric switching Impact ionisation Lanthanum compounds Negative resistance Permittivity Schottky barriers Strontium compounds Titanium compounds
Publisher:	American Physical Society
Journal:	Physical review. B, Condensed matter and materials physics
ISSN:	1098-0121
EISSN:	1550-235X
DOI:	10.1103/PhysRevB.77.233103
Rights:	Physical Review B © 2008 The American Physical Society. The Journal's web site is located at http://prb.aps.org/
Appears in Collections:	Journal/Magazine Article

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