Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4790
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorRuotolo, A-
dc.creatorLeung, CW-
dc.creatorLam, CY-
dc.creatorCheng, WF-
dc.creatorWong, KH-
dc.date.accessioned2014-12-11T08:23:38Z-
dc.date.available2014-12-11T08:23:38Z-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10397/4790-
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsPhysical Review B © 2008 The American Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.subjectDielectric hysteresisen_US
dc.subjectFerroelectric switchingen_US
dc.subjectImpact ionisationen_US
dc.subjectLanthanum compoundsen_US
dc.subjectNegative resistanceen_US
dc.subjectPermittivityen_US
dc.subjectSchottky barriersen_US
dc.subjectStrontium compoundsen_US
dc.subjectTitanium compoundsen_US
dc.titleUnification of bulk and interface electroresistive switching in oxide systemsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: A. Ruotoloen_US
dc.description.otherinformationAuthor name used in this publication: W. F. Chengen_US
dc.description.otherinformationAuthor name used in this publication: K. H. Wongen_US
dc.identifier.spage1-
dc.identifier.epage4-
dc.identifier.volume77-
dc.identifier.issue23-
dc.identifier.doi10.1103/PhysRevB.77.233103-
dcterms.abstractWe demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationPhysical review. B, Condensed matter and materials physics, 15 June 2008, v. 77, no. 23, 233103, p. 1-4-
dcterms.isPartOfPhysical review. B, Condensed matter and materials physics-
dcterms.issued2008-06-15-
dc.identifier.isiWOS:000257289500003-
dc.identifier.scopus2-s2.0-45349094414-
dc.identifier.eissn1550-235X-
dc.identifier.rosgroupidr37423-
dc.description.ros2007-2008 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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