Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4790
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Materials Research Centre | - |
dc.creator | Ruotolo, A | - |
dc.creator | Leung, CW | - |
dc.creator | Lam, CY | - |
dc.creator | Cheng, WF | - |
dc.creator | Wong, KH | - |
dc.date.accessioned | 2014-12-11T08:23:38Z | - |
dc.date.available | 2014-12-11T08:23:38Z | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4790 | - |
dc.language.iso | en | en_US |
dc.publisher | American Physical Society | en_US |
dc.rights | Physical Review B © 2008 The American Physical Society. The Journal's web site is located at http://prb.aps.org/ | en_US |
dc.subject | Dielectric hysteresis | en_US |
dc.subject | Ferroelectric switching | en_US |
dc.subject | Impact ionisation | en_US |
dc.subject | Lanthanum compounds | en_US |
dc.subject | Negative resistance | en_US |
dc.subject | Permittivity | en_US |
dc.subject | Schottky barriers | en_US |
dc.subject | Strontium compounds | en_US |
dc.subject | Titanium compounds | en_US |
dc.title | Unification of bulk and interface electroresistive switching in oxide systems | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: A. Ruotolo | en_US |
dc.description.otherinformation | Author name used in this publication: W. F. Cheng | en_US |
dc.description.otherinformation | Author name used in this publication: K. H. Wong | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 4 | - |
dc.identifier.volume | 77 | - |
dc.identifier.issue | 23 | - |
dc.identifier.doi | 10.1103/PhysRevB.77.233103 | - |
dcterms.abstract | We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Physical review. B, Condensed matter and materials physics, 15 June 2008, v. 77, no. 23, 233103, p. 1-4 | - |
dcterms.isPartOf | Physical review. B, Condensed matter and materials physics | - |
dcterms.issued | 2008-06-15 | - |
dc.identifier.isi | WOS:000257289500003 | - |
dc.identifier.scopus | 2-s2.0-45349094414 | - |
dc.identifier.eissn | 1550-235X | - |
dc.identifier.rosgroupid | r37423 | - |
dc.description.ros | 2007-2008 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Ruotolo_Bulk_Interface_Electroresistive.pdf | 326.99 kB | Adobe PDF | View/Open |
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