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http://hdl.handle.net/10397/4779
| Title: | The influence of gate dielectrics on a high-mobility n-type conjugated polymer in organic thin-film transistors | Authors: | Li, J Du, J Xu, J Chan, HLW Yan, F |
Issue Date: | 16-Jan-2012 | Source: | Applied physics letters, 16 Jan. 2012, v. 100, 033301, p. 1-4 | Abstract: | Organic thin-film transistors based on a high mobility n-type semiconductor poly{[n,n9-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bithiophene)} P(NDI2OD-T2) and different polymer gate dielectrics are fabricated. The average electron mobility decreases from 0.76 to 0.08 cm²/Vs with the increase of the gate dielectric constant from 2.6 to 7.8. The P(NDI2OD-T2) film shows unconventional face-on molecular packing, which results in short distances and pronounced interactions between electrons and gate dielectric. Therefore, the decrease of the electron mobility with the increasing dielectric constant is attributed to the Fröhlich polaron effect for the interaction between electrons in the channel and ionic polarization cloud in the gate dielectric. | Keywords: | Electron mobility Organic field effect transistors Organic semiconductors Permittivity Polymer films Semiconductor thin films Thin film transistors |
Publisher: | American Institute of Physics | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | DOI: | 10.1063/1.3678196 | Rights: | © 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Jinhua Li et al., Appl. Phys. Lett. 100, 033301 (2012) and may be found at http://link.aip.org/link/?apl/100/033301 |
| Appears in Collections: | Journal/Magazine Article |
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| Li_Organic_Thin-film_Transistors.pdf | 2.07 MB | Adobe PDF | View/Open |
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