Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4779
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dc.contributorDepartment of Applied Physics-
dc.creatorLi, J-
dc.creatorDu, J-
dc.creatorXu, J-
dc.creatorChan, HLW-
dc.creatorYan, F-
dc.date.accessioned2014-12-11T08:25:49Z-
dc.date.available2014-12-11T08:25:49Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4779-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Jinhua Li et al., Appl. Phys. Lett. 100, 033301 (2012) and may be found at http://link.aip.org/link/?apl/100/033301en_US
dc.subjectElectron mobilityen_US
dc.subjectOrganic field effect transistorsen_US
dc.subjectOrganic semiconductorsen_US
dc.subjectPermittivityen_US
dc.subjectPolymer filmsen_US
dc.subjectSemiconductor thin filmsen_US
dc.subjectThin film transistorsen_US
dc.titleThe influence of gate dielectrics on a high-mobility n-type conjugated polymer in organic thin-film transistorsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage4-
dc.identifier.volume100-
dc.identifier.doi10.1063/1.3678196-
dcterms.abstractOrganic thin-film transistors based on a high mobility n-type semiconductor poly{[n,n9-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bithiophene)} P(NDI2OD-T2) and different polymer gate dielectrics are fabricated. The average electron mobility decreases from 0.76 to 0.08 cm²/Vs with the increase of the gate dielectric constant from 2.6 to 7.8. The P(NDI2OD-T2) film shows unconventional face-on molecular packing, which results in short distances and pronounced interactions between electrons and gate dielectric. Therefore, the decrease of the electron mobility with the increasing dielectric constant is attributed to the Fröhlich polaron effect for the interaction between electrons in the channel and ionic polarization cloud in the gate dielectric.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 16 Jan. 2012, v. 100, 033301, p. 1-4-
dcterms.isPartOfApplied physics letters-
dcterms.issued2012-01-16-
dc.identifier.isiWOS:000299386800058-
dc.identifier.scopus2-s2.0-84863069736-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr56253-
dc.description.ros2011-2012 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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