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http://hdl.handle.net/10397/4574
| Title: | Phase-change control of ferromagnetism in GeTe-based phase change magnetic thin-films by pulsed laser deposition | Authors: | Tong, F Hao, JH Chen, ZP Gao, G Miao, XS |
Issue Date: | 22-Aug-2011 | Source: | Applied physics letters, 22 Aug. 2011, v. 99, 081908, p. 1-3 | Abstract: | Phase change control of ferromagnetism in Ge₀.₉₈Fe₀.₀₂Te thin film prepared by pulsed laser deposition is investigated. The magnetic property of Fe doped phase change material GeTe is found to vary with phase change between amorphous and crystalline states corresponding to the variation of conductance during phase change. The results indicate that a fast control of ferromagnetism by phase change can be realized. The measurement of temperature dependent magnetization shows a long range ferromagnetic interaction in ordered crystalline phase and a short range ferromagnetic interaction in frustrated amorphous phase, which is consistent with phase change. | Keywords: | Amorphous magnetic materials Amorphous semiconductors Carrier density Electric admittance Ferromagnetic materials Frustration Germanium compounds Iron compounds Magnetic thin films Magnetisation Phase change materials Pulsed laser deposition RKKY interaction Semiconductor growth Semiconductor thin films Semimagnetic semiconductors Short-range order |
Publisher: | American Institute of Physics | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | DOI: | 10.1063/1.3628660 | Rights: | © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. Tong, Appl. Phys. Lett. 99, 081908 (2011) and may be found at http://link.aip.org/link/?apl/99/081908 |
| Appears in Collections: | Journal/Magazine Article |
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