Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4574
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Tong, F | - |
dc.creator | Hao, JH | - |
dc.creator | Chen, ZP | - |
dc.creator | Gao, G | - |
dc.creator | Miao, XS | - |
dc.date.accessioned | 2014-12-11T08:24:08Z | - |
dc.date.available | 2014-12-11T08:24:08Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4574 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. Tong, Appl. Phys. Lett. 99, 081908 (2011) and may be found at http://link.aip.org/link/?apl/99/081908 | en_US |
dc.subject | Amorphous magnetic materials | en_US |
dc.subject | Amorphous semiconductors | en_US |
dc.subject | Carrier density | en_US |
dc.subject | Electric admittance | en_US |
dc.subject | Ferromagnetic materials | en_US |
dc.subject | Frustration | en_US |
dc.subject | Germanium compounds | en_US |
dc.subject | Iron compounds | en_US |
dc.subject | Magnetic thin films | en_US |
dc.subject | Magnetisation | en_US |
dc.subject | Phase change materials | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.subject | RKKY interaction | en_US |
dc.subject | Semiconductor growth | en_US |
dc.subject | Semiconductor thin films | en_US |
dc.subject | Semimagnetic semiconductors | en_US |
dc.subject | Short-range order | en_US |
dc.title | Phase-change control of ferromagnetism in GeTe-based phase change magnetic thin-films by pulsed laser deposition | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: G. Y. Gao | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 99 | - |
dc.identifier.doi | 10.1063/1.3628660 | - |
dcterms.abstract | Phase change control of ferromagnetism in Ge₀.₉₈Fe₀.₀₂Te thin film prepared by pulsed laser deposition is investigated. The magnetic property of Fe doped phase change material GeTe is found to vary with phase change between amorphous and crystalline states corresponding to the variation of conductance during phase change. The results indicate that a fast control of ferromagnetism by phase change can be realized. The measurement of temperature dependent magnetization shows a long range ferromagnetic interaction in ordered crystalline phase and a short range ferromagnetic interaction in frustrated amorphous phase, which is consistent with phase change. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 22 Aug. 2011, v. 99, 081908, p. 1-3 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2011-08-22 | - |
dc.identifier.isi | WOS:000294359100020 | - |
dc.identifier.scopus | 2-s2.0-80052401108 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r57142 | - |
dc.description.ros | 2011-2012 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | VoR allowed | en_US |
Appears in Collections: | Journal/Magazine Article |
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