Ni induced few-layer graphene growth at low temperature by pulsed laser deposition

Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4424

Title:	Ni induced few-layer graphene growth at low temperature by pulsed laser deposition
Authors:	Wang, K Tai, G Wong, KH Lau, SP Guo, W
Issue Date:	Jun-2011
Source:	AIP advances, June 2011, v. 1, no. 2, 022141, p. 1-9
Abstract:	We have used pulsed laser deposition to fabricate graphene on catalytic nickel thin film at reduced temperature of 650 °C. Non-destructive micro-Raman spectroscopic study on our samples, measuring 1x1 cm² each, has revealed few-layer graphene formation. Bi-, tri-, and few-layer graphene growth has been verified by High Resolution Transmission Electron Microscopy. Our experimental results imply that the number of graphene layers formation relies on film thickness ratios of C to Ni, which can be well controlled by varying the laser ablation time. This simple and low temperature synthesizing method is excellent for graphene based nanotechnology research and device fabrication.
Keywords:	Graphene Nondestructive testing Pulsed laser deposition Raman spectra Transmission electron microscopy
Publisher:	American Institute of Physics
Journal:	AIP advances
ISSN:	2158-3226 (online)
DOI:	10.1063/1.3602855
Rights:	© 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.
Appears in Collections:	Journal/Magazine Article