Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4424
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dc.contributorDepartment of Applied Physics-
dc.creatorWang, K-
dc.creatorTai, G-
dc.creatorWong, KH-
dc.creatorLau, SP-
dc.creatorGuo, W-
dc.date.accessioned2014-12-11T08:24:44Z-
dc.date.available2014-12-11T08:24:44Z-
dc.identifier.issn2158-3226 (online)-
dc.identifier.urihttp://hdl.handle.net/10397/4424-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.en_US
dc.subjectGrapheneen_US
dc.subjectNondestructive testingen_US
dc.subjectPulsed laser depositionen_US
dc.subjectRaman spectraen_US
dc.subjectTransmission electron microscopyen_US
dc.titleNi induced few-layer graphene growth at low temperature by pulsed laser depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: K. H. Wongen_US
dc.identifier.spage1-
dc.identifier.epage9-
dc.identifier.volume1-
dc.identifier.issue2-
dc.identifier.doi10.1063/1.3602855-
dcterms.abstractWe have used pulsed laser deposition to fabricate graphene on catalytic nickel thin film at reduced temperature of 650 °C. Non-destructive micro-Raman spectroscopic study on our samples, measuring 1x1 cm² each, has revealed few-layer graphene formation. Bi-, tri-, and few-layer graphene growth has been verified by High Resolution Transmission Electron Microscopy. Our experimental results imply that the number of graphene layers formation relies on film thickness ratios of C to Ni, which can be well controlled by varying the laser ablation time. This simple and low temperature synthesizing method is excellent for graphene based nanotechnology research and device fabrication.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationAIP advances, June 2011, v. 1, no. 2, 022141, p. 1-9-
dcterms.isPartOfAIP advances-
dcterms.issued2011-06-
dc.identifier.isiWOS:000302137000039-
dc.identifier.scopus2-s2.0-80052796464-
dc.identifier.rosgroupidr53509-
dc.description.ros2010-2011 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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