Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4424
| Title: | Ni induced few-layer graphene growth at low temperature by pulsed laser deposition | Authors: | Wang, K Tai, G Wong, KH Lau, SP Guo, W |
Issue Date: | Jun-2011 | Source: | AIP advances, June 2011, v. 1, no. 2, 022141, p. 1-9 | Abstract: | We have used pulsed laser deposition to fabricate graphene on catalytic nickel thin film at reduced temperature of 650 °C. Non-destructive micro-Raman spectroscopic study on our samples, measuring 1x1 cm² each, has revealed few-layer graphene formation. Bi-, tri-, and few-layer graphene growth has been verified by High Resolution Transmission Electron Microscopy. Our experimental results imply that the number of graphene layers formation relies on film thickness ratios of C to Ni, which can be well controlled by varying the laser ablation time. This simple and low temperature synthesizing method is excellent for graphene based nanotechnology research and device fabrication. | Keywords: | Graphene Nondestructive testing Pulsed laser deposition Raman spectra Transmission electron microscopy |
Publisher: | American Institute of Physics | Journal: | AIP advances | ISSN: | 2158-3226 (online) | DOI: | 10.1063/1.3602855 | Rights: | © 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. |
| Appears in Collections: | Journal/Magazine Article |
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