Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4416
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dc.contributorDepartment of Applied Physics-
dc.creatorWang, DY-
dc.creatorChan, NY-
dc.creatorLi, S-
dc.creatorChoy, SH-
dc.creatorTian, HY-
dc.creatorChan, HLW-
dc.date.accessioned2014-12-11T08:24:36Z-
dc.date.available2014-12-11T08:24:36Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4416-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D. Y. Wang et al. Appl. Phys. Lett. 97, 212901 (2010) and may be found at http://link.aip.org/link/?apl/97/212901en_US
dc.subjectBariumen_US
dc.subjectCeriumen_US
dc.subjectCerium compoundsen_US
dc.subjectCrystallographyen_US
dc.subjectElectric propertiesen_US
dc.subjectFerroelectricityen_US
dc.subjectManganeseen_US
dc.subjectPiezoelectricityen_US
dc.subjectSodiumen_US
dc.subjectThin filmsen_US
dc.titleEnhanced ferroelectric and piezoelectric properties in doped lead-free (Bi₀. ₅Na₀. ₅) ₀. ₉ ₄ Ba₀. ₀ ₆ TiO ₃ thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: S. H. Choyen_US
dc.description.otherinformationAuthor name used in this publication: H. L. W Chanen_US
dc.identifier.volume97-
dc.identifier.issue21-
dc.identifier.doi10.1063/1.3518484-
dcterms.abstractDoping effects with respect to the electrical properties of morphotropic phase boundary (Bi₀. ₅Na₀. ₅) ₀. ₉ ₄ Ba₀. ₀ ₆ TiO ₃ thin films epitaxially grown on CaRuO ₃ electroded (LaAlO₃) ₀.₃ (Sr₂ AlTaO ₆ ) ₀.₃₅ (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+Ce codoped films with a remanent polarization P r of 29.5 μC/ cm² and a remanent piezoelectric coefficient d₃₃,[sub f] of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 22 Nov. 2010, v. 97, no. 21, 212901, p.1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2010-11-22-
dc.identifier.isiWOS:000284618300034-
dc.identifier.scopus2-s2.0-78649571119-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr55850-
dc.description.ros2010-2011 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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