Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4233
PIRA download icon_1.1View/Download Full Text
Title: Study on the crystallization by an electrical resistance measurement in Ge₂Sb₂Te₅ and N-doped Ge₂Sb₂Te₅ films
Authors: Hu, DZ
Lu, XM
Zhu, JS
Yan, F 
Issue Date: 1-Dec-2007
Source: Journal of applied physics, 1 Dec. 2007, v. 102, no. 11, 113507, p. 1-4
Abstract: An electric resistance measurement was used to study the crystallization process of Ge₂Sb₂Te₅ (GST) and N-doped Ge₂Sb₂Te₅ (N-GST) films. The relation between onductivity and annealing time was investigated and the crystallization parameters were determined directly by resistance measurement during isothermal crystallization process in the amorphous GST and the N-GST films. The results show that the crystallization processes in both GST and N-GST films are layer by layer. Their conductivities satisfy the equation σ = σc−(σc−σa)exp(−ktⁿ), at t>r , where r is a temperature-dependent time in the process of crystallization. The activation energy for crystallization of amorphous GST films was 2.11±0.18 eV and the Avrami coefficient was between 2 to 4, in close agreement with previous studies using different techniques. After N doping the Avrami coefficient decreased, while the activation energy increased. The formation of a strain induced by the distortion of unit cell after N doping was used to explain the observed results.
Keywords: Annealing
Antimony alloys
Crystallisation
Electrical conductivity
Electrical resistivity
Germanium alloys
Lattice constants
Metallic thin films
Tellurium alloys
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.2818104
Rights: © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D. Z. Hu et al., J. Appl. Phys. 102, 113507 (2007) and may be found at http://link.aip.org/link/?jap/102/113507.
Appears in Collections:Journal/Magazine Article

Files in This Item:
File Description SizeFormat 
Hu_Study_crystallization_electrical.pdf230.45 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show full item record

Page views

137
Last Week
1
Last month
Citations as of Mar 24, 2024

Downloads

246
Citations as of Mar 24, 2024

SCOPUSTM   
Citations

24
Last Week
0
Last month
0
Citations as of Mar 28, 2024

WEB OF SCIENCETM
Citations

21
Last Week
0
Last month
0
Citations as of Mar 28, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.