Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4233
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dc.contributorDepartment of Applied Physics-
dc.creatorHu, DZ-
dc.creatorLu, XM-
dc.creatorZhu, JS-
dc.creatorYan, F-
dc.date.accessioned2014-12-11T08:28:39Z-
dc.date.available2014-12-11T08:28:39Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4233-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D. Z. Hu et al., J. Appl. Phys. 102, 113507 (2007) and may be found at http://link.aip.org/link/?jap/102/113507.en_US
dc.subjectAnnealingen_US
dc.subjectAntimony alloysen_US
dc.subjectCrystallisationen_US
dc.subjectElectrical conductivityen_US
dc.subjectElectrical resistivityen_US
dc.subjectGermanium alloysen_US
dc.subjectLattice constantsen_US
dc.subjectMetallic thin filmsen_US
dc.subjectTellurium alloysen_US
dc.titleStudy on the crystallization by an electrical resistance measurement in Ge₂Sb₂Te₅ and N-doped Ge₂Sb₂Te₅ filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: F. Yanen_US
dc.identifier.spage1-
dc.identifier.epage4-
dc.identifier.volume102-
dc.identifier.issue11-
dc.identifier.doi10.1063/1.2818104-
dcterms.abstractAn electric resistance measurement was used to study the crystallization process of Ge₂Sb₂Te₅ (GST) and N-doped Ge₂Sb₂Te₅ (N-GST) films. The relation between onductivity and annealing time was investigated and the crystallization parameters were determined directly by resistance measurement during isothermal crystallization process in the amorphous GST and the N-GST films. The results show that the crystallization processes in both GST and N-GST films are layer by layer. Their conductivities satisfy the equation σ = σc−(σc−σa)exp(−ktⁿ), at t>r , where r is a temperature-dependent time in the process of crystallization. The activation energy for crystallization of amorphous GST films was 2.11±0.18 eV and the Avrami coefficient was between 2 to 4, in close agreement with previous studies using different techniques. After N doping the Avrami coefficient decreased, while the activation energy increased. The formation of a strain induced by the distortion of unit cell after N doping was used to explain the observed results.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 Dec. 2007, v. 102, no. 11, 113507, p. 1-4-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2007-12-01-
dc.identifier.isiWOS:000251678800030-
dc.identifier.scopus2-s2.0-37149031866-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr38475-
dc.description.ros2007-2008 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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