Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4219
PIRA download icon_1.1View/Download Full Text
Title: The effects of interdiffusion on the subbands in GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths
Authors: Chan, MCY
Surya, C 
Wai, PKA 
Issue Date: 1-Jul-2001
Source: Journal of applied physics, 1 July 2001, v. 90, no. 1, p. 197-201
Abstract: The interdiffusion of GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs single quantum well (QW) structure with well width of 6 nm is studied theoretically. The as-grown Ga concentration in the QW is chosen to be 0.7 and 0.6 for the operation wavelengths of 1.3 and 1.55 μm, respectively. We studied the effects of interdiffusion on the in-plane strain, confinement potential, and subband energy levels of the QW using Fick’s law. The diffusion coefficients of both the well and barrier layers are assumed to be constant. The effects of valence band mixing and strains are included in the calculation of the electron and hole subband structures. We find that the group-III interdiffusion effects can result in blueshifts of 123 and 211 nm in the GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs QW at operation wavelength of 1.3 μm (x=0.7) and 1.55 μm (x=0.6), respectively. Our results show that interdiffusion technique can be used to tune the operating wavelengths of GaInAsN/GaAs lasers for multiwavelength applications such as in the sources of dense wavelength division multiplexed optical communication systems.
Keywords: Chemical interdiffusion
III-V semiconductors
Gallium compounds
Gallium arsenide
Indium compounds
Quantum well lasers
Internal stresses
Interface states
Spectral line shift
Valence bands
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.1370110
Rights: © 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. C. Y. Chan, C. Surya & P. K. A. Wai, J. Appl. Phys. 90, 197 (2001) and may be found at http://link.aip.org/link/?jap/90/197.
Appears in Collections:Journal/Magazine Article

Files in This Item:
File Description SizeFormat 
Chan_Effects_interdiffusion_subbands.pdf79.14 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show full item record

Page views

54
Last Week
4
Last month
Citations as of Jul 3, 2022

Downloads

39
Citations as of Jul 3, 2022

SCOPUSTM   
Citations

62
Last Week
0
Last month
0
Citations as of Jun 30, 2022

WEB OF SCIENCETM
Citations

60
Last Week
0
Last month
0
Citations as of Jun 30, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.