Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4219
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dc.contributorDepartment of Electronic and Information Engineering-
dc.creatorChan, MCY-
dc.creatorSurya, C-
dc.creatorWai, PKA-
dc.date.accessioned2014-12-11T08:28:39Z-
dc.date.available2014-12-11T08:28:39Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4219-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. C. Y. Chan, C. Surya & P. K. A. Wai, J. Appl. Phys. 90, 197 (2001) and may be found at http://link.aip.org/link/?jap/90/197.en_US
dc.subjectChemical interdiffusionen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectGallium compoundsen_US
dc.subjectGallium arsenideen_US
dc.subjectIndium compoundsen_US
dc.subjectQuantum well lasersen_US
dc.subjectInternal stressesen_US
dc.subjectInterface statesen_US
dc.subjectSpectral line shiften_US
dc.subjectValence bandsen_US
dc.titleThe effects of interdiffusion on the subbands in GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs quantum well for 1.3 and 1.55 μm operation wavelengthsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: P. K. A. Waien_US
dc.identifier.spage197-
dc.identifier.epage201-
dc.identifier.volume90-
dc.identifier.issue1-
dc.identifier.doi10.1063/1.1370110-
dcterms.abstractThe interdiffusion of GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs single quantum well (QW) structure with well width of 6 nm is studied theoretically. The as-grown Ga concentration in the QW is chosen to be 0.7 and 0.6 for the operation wavelengths of 1.3 and 1.55 μm, respectively. We studied the effects of interdiffusion on the in-plane strain, confinement potential, and subband energy levels of the QW using Fick’s law. The diffusion coefficients of both the well and barrier layers are assumed to be constant. The effects of valence band mixing and strains are included in the calculation of the electron and hole subband structures. We find that the group-III interdiffusion effects can result in blueshifts of 123 and 211 nm in the GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs QW at operation wavelength of 1.3 μm (x=0.7) and 1.55 μm (x=0.6), respectively. Our results show that interdiffusion technique can be used to tune the operating wavelengths of GaInAsN/GaAs lasers for multiwavelength applications such as in the sources of dense wavelength division multiplexed optical communication systems.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 July 2001, v. 90, no. 1, p. 197-201-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2001-07-01-
dc.identifier.isiWOS:000169361100028-
dc.identifier.scopus2-s2.0-0035395418-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr09531-
dc.description.ros2001-2002 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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