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Title: Highly reflective distributed Bragg reflectors using a deeply etched semiconductor/air grating for InGaN/GaN laser diodes
Authors: Saitoh, T
Kumagai, M
Wang, H
Tawara, T
Nishida, T
Akasaka, T
Kobayashi, N
Issue Date: 23-Jun-2003
Source: Applied physics letters, 23 June, 2003, v. 82, no. 25, p. 4426-4428
Abstract: High reflectivity is achieved by deeply etched InGaN/GaN distributed Bragg reflector (DBR) mirrors with tilted sidewalls, which are appropriately designed by using the finite-difference time-domain method. The predicted optimal structure is different from the simple design consisting of a λ/(4n) semiconductor and λ/4 air. If the sidewall of the grating is tilted by 4°, the reflectivity of the DBR mirrors decreases to less than 40%. However, any degradation in the reflectivity of a perfectly vertical sidewall can be suppressed to just a few percent even with a sidewall tilt of 4°, if the DBR structure is properly designed. We fabricated InGaN/GaN multiple-quantum well lasers based on the optimal design. The devices operate as lasers with optical pumping at a lower threshold than devices without DBR mirrors. The DBR mirror reflectivity is characterized by the relation between the threshold pump intensity and the inverse of the cavity length, resulting in a high reflectivity of 62%.
Keywords: Indium compounds
Gallium compounds
Distributed Bragg reflector lasers
Quantum well lasers
Laser mirrors
Optical pumping
Finite difference time-domain analysis
Laser cavity resonators
III-V semiconductors
Wide band gap semiconductors
Sputter etching
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.1586992
Rights: © 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Tadashi Saitoh et al., Appl. Phys. Lett. 82, 4426 (2003) and may be found at
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