Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4200
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dc.contributorDepartment of Electronic and Information Engineering-
dc.creatorSaitoh, T-
dc.creatorKumagai, M-
dc.creatorWang, H-
dc.creatorTawara, T-
dc.creatorNishida, T-
dc.creatorAkasaka, T-
dc.creatorKobayashi, N-
dc.date.accessioned2014-12-11T08:23:03Z-
dc.date.available2014-12-11T08:23:03Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4200-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Tadashi Saitoh et al., Appl. Phys. Lett. 82, 4426 (2003) and may be found at http://apl.aip.org/resource/1/applab/v82/i25/p4426_s1en_US
dc.subjectIndium compoundsen_US
dc.subjectGallium compoundsen_US
dc.subjectDistributed Bragg reflector lasersen_US
dc.subjectQuantum well lasersen_US
dc.subjectLaser mirrorsen_US
dc.subjectReflectivityen_US
dc.subjectOptical pumpingen_US
dc.subjectFinite difference time-domain analysisen_US
dc.subjectLaser cavity resonatorsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectSputter etchingen_US
dc.titleHighly reflective distributed Bragg reflectors using a deeply etched semiconductor/air grating for InGaN/GaN laser diodesen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage4426-
dc.identifier.epage4428-
dc.identifier.volume82-
dc.identifier.issue25-
dc.identifier.doi10.1063/1.1586992-
dcterms.abstractHigh reflectivity is achieved by deeply etched InGaN/GaN distributed Bragg reflector (DBR) mirrors with tilted sidewalls, which are appropriately designed by using the finite-difference time-domain method. The predicted optimal structure is different from the simple design consisting of a λ/(4n) semiconductor and λ/4 air. If the sidewall of the grating is tilted by 4°, the reflectivity of the DBR mirrors decreases to less than 40%. However, any degradation in the reflectivity of a perfectly vertical sidewall can be suppressed to just a few percent even with a sidewall tilt of 4°, if the DBR structure is properly designed. We fabricated InGaN/GaN multiple-quantum well lasers based on the optimal design. The devices operate as lasers with optical pumping at a lower threshold than devices without DBR mirrors. The DBR mirror reflectivity is characterized by the relation between the threshold pump intensity and the inverse of the cavity length, resulting in a high reflectivity of 62%.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 23 June, 2003, v. 82, no. 25, p. 4426-4428-
dcterms.isPartOfApplied physics letters-
dcterms.issued2003-06-23-
dc.identifier.scopus2-s2.0-0038044906-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr13035-
dc.description.ros2002-2003 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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