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http://hdl.handle.net/10397/3266
| Title: | Nonvolatile multilevel memory effect by resistive switching in manganite thin films | Authors: | Lau, HK Leung, DCW |
Issue Date: | 15-Dec-2008 | Source: | Journal of applied physics, 15 Dec. 2008, v. 104, no. 12, 123705, p. 1-4 | Abstract: | A planar multilevel memory structure is proposed and examined based on the resistive switching phenomenon in La₀.₇Sr₀.₃MnO₃ films with gold electrodes. Through the application of specific voltage pulses, such structures can be driven to well-defined intermediate resistance values. Samples were subjected to repeated switching cycles and prolonged reading processes to examine their durability during operations. Prescribed states of the samples could be retained after 10 000 switching cycles, and such states remained stable upon continuous probing. The proposed structure provides a simple scheme for the implementation of compact and nonvolatile multibit memory devices. | Keywords: | Gold Lanthanum compounds Magnetic thin films Random-access storage Strontium compounds Switching |
Publisher: | American Institute of Physics | Journal: | Journal of applied physics | ISSN: | 0021-8979 | EISSN: | 1089-7550 | DOI: | 10.1063/1.3043801 | Rights: | © 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H.K. Lau & C.W. Leung, J. Appl. Phys. 104, 123705 (2008) and may be found at http://jap.aip.org/resource/1/japiau/v104/i12/p123705_s1. |
| Appears in Collections: | Journal/Magazine Article |
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|---|---|---|---|---|
| JApplPhys_104_123705.pdf | 276.8 kB | Adobe PDF | View/Open |
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