Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/2487
| Title: | Highly photosensitive thin film transistors based on a composite of poly(3-hexylthiophene) and titania nanoparticles | Authors: | Yan, F Li, J Mok, SM |
Issue Date: | 1-Oct-2009 | Source: | Journal of applied physics, 1 Oct. 2009, v. 106, no. 7, 074501, p. 1-7 | Abstract: | Organic phototransistors based on a composite of P3HT and TiO₂nanoparticles have been fabricated, which show high photosensitivity, fast response, and stable performance under both visible and ultraviolet light illumination, and thus they are promising for applications as low cost photosensors. The transfer characteristic of each device exhibits a parallel shift to a positive gate voltage under light illumination, and the channel current increases up to three orders of magnitude in the subthreshold region. The shift in the threshold voltage of the device has a nonlinear relationship with light intensity, which can be attributed to the accumulation of electrons in the embedded TiO₂nanoparticles. It has been found that the device is extremely sensitive to weak light due to an integration effect. The relationship between the threshold voltage change and the intensity of light illumination can be fitted with a power law. An analytical model has been developed to describe the photosensitive behavior of the devices. It is expected that such organic phototransistors can be developed for sensing different wavelengths based on different semiconducting polymers and semiconducting nanoparticles. | Keywords: | Conducting polymers Nanocomposites Nanoparticles Organic semiconductors Phototransistors Sensors Thin film transistors Titanium compounds |
Publisher: | American Institute of Physics | Journal: | Journal of applied physics | ISSN: | 0021-8979 | EISSN: | 1089-7550 | DOI: | 10.1063/1.3225760 | Rights: | © 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Feng Yan et al., J. Appl. Phys. 106, 074501 (2009) and may be found at http://link.aip.org/link/?jap/106/074501 |
| Appears in Collections: | Journal/Magazine Article |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| JApplPhys_106_074501.pdf | 691.38 kB | Adobe PDF | View/Open |
Access
View full-text via PolyU eLinks 
Page views
126
Last Week
1
1
Last month
Citations as of May 28, 2023
Downloads
206
Citations as of May 28, 2023
SCOPUSTM
Citations
68
Last Week
1
1
Last month
0
0
Citations as of Jun 1, 2023
WEB OF SCIENCETM
Citations
55
Last Week
0
0
Last month
0
0
Citations as of Jun 1, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.