Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2487
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dc.contributorDepartment of Applied Physics-
dc.creatorYan, F-
dc.creatorLi, J-
dc.creatorMok, SM-
dc.date.accessioned2014-12-11T08:26:58Z-
dc.date.available2014-12-11T08:26:58Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/2487-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Feng Yan et al., J. Appl. Phys. 106, 074501 (2009) and may be found at http://link.aip.org/link/?jap/106/074501en_US
dc.subjectConducting polymersen_US
dc.subjectNanocompositesen_US
dc.subjectNanoparticlesen_US
dc.subjectOrganic semiconductorsen_US
dc.subjectPhototransistorsen_US
dc.subjectSensorsen_US
dc.subjectThin film transistorsen_US
dc.subjectTitanium compoundsen_US
dc.titleHighly photosensitive thin film transistors based on a composite of poly(3-hexylthiophene) and titania nanoparticlesen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage7-
dc.identifier.volume106-
dc.identifier.issue7-
dc.identifier.doi10.1063/1.3225760-
dcterms.abstractOrganic phototransistors based on a composite of P3HT and TiO₂nanoparticles have been fabricated, which show high photosensitivity, fast response, and stable performance under both visible and ultraviolet light illumination, and thus they are promising for applications as low cost photosensors. The transfer characteristic of each device exhibits a parallel shift to a positive gate voltage under light illumination, and the channel current increases up to three orders of magnitude in the subthreshold region. The shift in the threshold voltage of the device has a nonlinear relationship with light intensity, which can be attributed to the accumulation of electrons in the embedded TiO₂nanoparticles. It has been found that the device is extremely sensitive to weak light due to an integration effect. The relationship between the threshold voltage change and the intensity of light illumination can be fitted with a power law. An analytical model has been developed to describe the photosensitive behavior of the devices. It is expected that such organic phototransistors can be developed for sensing different wavelengths based on different semiconducting polymers and semiconducting nanoparticles.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 Oct. 2009, v. 106, no. 7, 074501, p. 1-7-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2009-10-01-
dc.identifier.isiWOS:000270915600109-
dc.identifier.scopus2-s2.0-70350093815-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr45417-
dc.description.ros2009-2010 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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