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Title: All van der Waals photodetector for ultralow dark current
Authors: Alam, TI 
Hani, SU 
Ahmed, S 
Tsang, YH 
Issue Date: 2024
Source: Proceedings of SPIE : the International Society for Optical Engineering, 2024, v. 12888, 128880A
Abstract: Modern optoelectronic technologies rely heavily on UV photodetectors, which transform UV light stimuli into electrical signals and are used to measure UV radiation levels useful in military communication, medicine and biology. In this work, we report a novel approach to mitigate dark current in Gr-GaS heterojunction by utilizing van der Waals contacted Au electrodes. The all van der Waals photodetector shows self-powered characteristics with rectification ratio of ~102, sub femto ampere dark currents and excellent photo response properties under illumination at 375nm. With detection ability of sub microwatt per square centimeter light of 375 nm at zero bias voltage, the device shows a self-powered responsivity of 16.21mA/W and specific detectivity of 2.12X1012 Jones with appreciable response times (rise/ fall) of 201.99ms/220.44ms with a linear dynamic range of 53.15dB. Such high-performance Gr-GaS-Au all van der Waals UV photodetector presented in this work is comparable to previously reported results, suggesting that it has great potential for UV-A band detection for weak light signals.
Keywords: GaS
Heterojunction
Self-powered
Transfer metal
Ultralow dark current
UV photodetector
Van der Waals contact
Publisher: SPIE - International Society for Optical Engineering
Journal: Proceedings of SPIE : the International Society for Optical Engineering 
ISSN: 0277-786X
EISSN: 1996-756X
DOI: 10.1117/12.3017997
Description: SPIE OPTO, 27 January - 1 February 2024, San Francisco, California, United States
Rights: Copyright 2024 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited.
The following publication Tawsif I. Alam, Sumaiya U. Hani, Safayet Ahmed, and Y. H. Tsang "All van der Waals photodetector for ultralow dark current", Proc. SPIE 12888, 2D Photonic Materials and Devices VII, 128880A (12 March 2024) is available at https://doi.org/10.1117/12.3017997.
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