Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/114634
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dc.contributorDepartment of Applied Physics-
dc.contributorPhotonics Research Institute-
dc.contributorMainland Development Office-
dc.creatorAlam, TI-
dc.creatorHani, SU-
dc.creatorAhmed, S-
dc.creatorTsang, YH-
dc.date.accessioned2025-08-18T03:02:27Z-
dc.date.available2025-08-18T03:02:27Z-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10397/114634-
dc.descriptionSPIE OPTO, 27 January - 1 February 2024, San Francisco, California, United Statesen_US
dc.language.isoenen_US
dc.publisherSPIE - International Society for Optical Engineeringen_US
dc.rightsCopyright 2024 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited.en_US
dc.rightsThe following publication Tawsif I. Alam, Sumaiya U. Hani, Safayet Ahmed, and Y. H. Tsang "All van der Waals photodetector for ultralow dark current", Proc. SPIE 12888, 2D Photonic Materials and Devices VII, 128880A (12 March 2024) is available at https://doi.org/10.1117/12.3017997.en_US
dc.subjectGaSen_US
dc.subjectHeterojunctionen_US
dc.subjectSelf-powereden_US
dc.subjectTransfer metalen_US
dc.subjectUltralow dark currenten_US
dc.subjectUV photodetectoren_US
dc.subjectVan der Waals contacten_US
dc.titleAll van der Waals photodetector for ultralow dark currenten_US
dc.typeConference Paperen_US
dc.identifier.volume12888-
dc.identifier.doi10.1117/12.3017997-
dcterms.abstractModern optoelectronic technologies rely heavily on UV photodetectors, which transform UV light stimuli into electrical signals and are used to measure UV radiation levels useful in military communication, medicine and biology. In this work, we report a novel approach to mitigate dark current in Gr-GaS heterojunction by utilizing van der Waals contacted Au electrodes. The all van der Waals photodetector shows self-powered characteristics with rectification ratio of ~102, sub femto ampere dark currents and excellent photo response properties under illumination at 375nm. With detection ability of sub microwatt per square centimeter light of 375 nm at zero bias voltage, the device shows a self-powered responsivity of 16.21mA/W and specific detectivity of 2.12X1012 Jones with appreciable response times (rise/ fall) of 201.99ms/220.44ms with a linear dynamic range of 53.15dB. Such high-performance Gr-GaS-Au all van der Waals UV photodetector presented in this work is comparable to previously reported results, suggesting that it has great potential for UV-A band detection for weak light signals.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationProceedings of SPIE : the International Society for Optical Engineering, 2024, v. 12888, 128880A-
dcterms.isPartOfProceedings of SPIE : the International Society for Optical Engineering-
dcterms.issued2024-
dc.identifier.scopus2-s2.0-85205231401-
dc.identifier.eissn1996-756X-
dc.identifier.artn128880A-
dc.description.validate202508 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Othersen_US
dc.description.fundingSourceSelf-fundeden_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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