Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/114436
| Title: | Planar hall effect and magnetoresistance effect in Pt/Tm₃Fe₅O₁₂ bilayers at low temperature | Authors: | Liu, Y Liang, J Xu, Z Li, J Ruan, J Ng, SM Huang, C Leung, CW |
Issue Date: | Aug-2025 | Source: | Electronics (Switzerland), Aug. 2025, v. 14, no. 15, 3060 | Abstract: | Spin transport behaviors in heavy metal/ferromagnetic insulator (HM/FI) bilayers have attracted considerable attention due to various novel phenomena and applications in spintronic devices. Herein, we investigate the planar Hall effect (PHE) in Pt/Tm3Fe5O12 (Pt/TmIG) heterostructures at low temperatures; moment switching in the ferrimagnetic insulator TmIG is detected by using electrical measurements. Double switching hysteresis PHE curves are found in Pt/TmIG bilayers, closely related to the magnetic moment of Tm3+ ions, which makes a key contribution to the total magnetic moment of TmIG film at low temperature. More importantly, a magnetoresistance (MR) curve with double switching is found, which has not been reported in this simple HM/FI bilayer, and the sign of this MR effect is sensitive to the angle between the magnetic field and current directions. Our findings of these effects in this HM/rare earth iron garnet (HM/REIG) bilayer provide insights into tuning the spin transport properties of HM/REIG by changing the rare earth. | Keywords: | Magnetoresistance Planar Hall effect Spintronic device Tm3Fe5O12 thin film |
Publisher: | MDPI AG | Journal: | Electronics (Switzerland) | EISSN: | 2079-9292 | DOI: | 10.3390/electronics14153060 | Rights: | Copyright: © 2025 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). The following publication Liu, Y., Liang, J., Xu, Z., Li, J., Ruan, J., Ng, S. M., Huang, C., & Leung, C. W. (2025). Planar Hall Effect and Magnetoresistance Effect in Pt/Tm3Fe5O12 Bilayers at Low Temperature. Electronics, 14(15), 3060 is available at https://doi.org/10.3390/electronics14153060. |
| Appears in Collections: | Journal/Magazine Article |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| electronics-14-03060.pdf | 1.95 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.



