Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/114436
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Department of Applied Physics | - |
| dc.creator | Liu, Y | en_US |
| dc.creator | Liang, J | en_US |
| dc.creator | Xu, Z | en_US |
| dc.creator | Li, J | en_US |
| dc.creator | Ruan, J | en_US |
| dc.creator | Ng, SM | en_US |
| dc.creator | Huang, C | en_US |
| dc.creator | Leung, CW | en_US |
| dc.date.accessioned | 2025-08-06T09:12:17Z | - |
| dc.date.available | 2025-08-06T09:12:17Z | - |
| dc.identifier.uri | http://hdl.handle.net/10397/114436 | - |
| dc.language.iso | en | en_US |
| dc.publisher | MDPI AG | en_US |
| dc.rights | Copyright: © 2025 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). | en_US |
| dc.rights | The following publication Liu, Y., Liang, J., Xu, Z., Li, J., Ruan, J., Ng, S. M., Huang, C., & Leung, C. W. (2025). Planar Hall Effect and Magnetoresistance Effect in Pt/Tm3Fe5O12 Bilayers at Low Temperature. Electronics, 14(15), 3060 is available at https://doi.org/10.3390/electronics14153060. | en_US |
| dc.subject | Magnetoresistance | en_US |
| dc.subject | Planar Hall effect | en_US |
| dc.subject | Spintronic device | en_US |
| dc.subject | Tm3Fe5O12 thin film | en_US |
| dc.title | Planar hall effect and magnetoresistance effect in Pt/Tm₃Fe₅O₁₂ bilayers at low temperature | en_US |
| dc.type | Journal/Magazine Article | en_US |
| dc.identifier.volume | 14 | en_US |
| dc.identifier.issue | 15 | en_US |
| dc.identifier.doi | 10.3390/electronics14153060 | en_US |
| dcterms.abstract | Spin transport behaviors in heavy metal/ferromagnetic insulator (HM/FI) bilayers have attracted considerable attention due to various novel phenomena and applications in spintronic devices. Herein, we investigate the planar Hall effect (PHE) in Pt/Tm3Fe5O12 (Pt/TmIG) heterostructures at low temperatures; moment switching in the ferrimagnetic insulator TmIG is detected by using electrical measurements. Double switching hysteresis PHE curves are found in Pt/TmIG bilayers, closely related to the magnetic moment of Tm3+ ions, which makes a key contribution to the total magnetic moment of TmIG film at low temperature. More importantly, a magnetoresistance (MR) curve with double switching is found, which has not been reported in this simple HM/FI bilayer, and the sign of this MR effect is sensitive to the angle between the magnetic field and current directions. Our findings of these effects in this HM/rare earth iron garnet (HM/REIG) bilayer provide insights into tuning the spin transport properties of HM/REIG by changing the rare earth. | - |
| dcterms.accessRights | open access | en_US |
| dcterms.bibliographicCitation | Electronics (Switzerland), Aug. 2025, v. 14, no. 15, 3060 | en_US |
| dcterms.isPartOf | Electronics (Switzerland) | en_US |
| dcterms.issued | 2025-08 | - |
| dc.identifier.eissn | 2079-9292 | en_US |
| dc.identifier.artn | 3060 | en_US |
| dc.description.validate | 202508 bcch | - |
| dc.description.oa | Version of Record | en_US |
| dc.identifier.FolderNumber | a3964 | - |
| dc.identifier.SubFormID | 51841 | - |
| dc.description.fundingSource | RGC | en_US |
| dc.description.fundingSource | Others | en_US |
| dc.description.fundingText | The Hong Kong Polytechnic University | en_US |
| dc.description.fundingText | Shenzhen Science and Techonology Programme | en_US |
| dc.description.pubStatus | Published | en_US |
| dc.description.oaCategory | CC | en_US |
| Appears in Collections: | Journal/Magazine Article | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| electronics-14-03060.pdf | 1.95 MB | Adobe PDF | View/Open |
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