Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/114436
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorLiu, Yen_US
dc.creatorLiang, Jen_US
dc.creatorXu, Zen_US
dc.creatorLi, Jen_US
dc.creatorRuan, Jen_US
dc.creatorNg, SMen_US
dc.creatorHuang, Cen_US
dc.creatorLeung, CWen_US
dc.date.accessioned2025-08-06T09:12:17Z-
dc.date.available2025-08-06T09:12:17Z-
dc.identifier.urihttp://hdl.handle.net/10397/114436-
dc.language.isoenen_US
dc.publisherMDPI AGen_US
dc.rightsCopyright: © 2025 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).en_US
dc.rightsThe following publication Liu, Y., Liang, J., Xu, Z., Li, J., Ruan, J., Ng, S. M., Huang, C., & Leung, C. W. (2025). Planar Hall Effect and Magnetoresistance Effect in Pt/Tm3Fe5O12 Bilayers at Low Temperature. Electronics, 14(15), 3060 is available at https://doi.org/10.3390/electronics14153060.en_US
dc.subjectMagnetoresistanceen_US
dc.subjectPlanar Hall effecten_US
dc.subjectSpintronic deviceen_US
dc.subjectTm3Fe5O12 thin filmen_US
dc.titlePlanar hall effect and magnetoresistance effect in Pt/Tm₃Fe₅O₁₂ bilayers at low temperatureen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume14en_US
dc.identifier.issue15en_US
dc.identifier.doi10.3390/electronics14153060en_US
dcterms.abstractSpin transport behaviors in heavy metal/ferromagnetic insulator (HM/FI) bilayers have attracted considerable attention due to various novel phenomena and applications in spintronic devices. Herein, we investigate the planar Hall effect (PHE) in Pt/Tm3Fe5O12 (Pt/TmIG) heterostructures at low temperatures; moment switching in the ferrimagnetic insulator TmIG is detected by using electrical measurements. Double switching hysteresis PHE curves are found in Pt/TmIG bilayers, closely related to the magnetic moment of Tm3+ ions, which makes a key contribution to the total magnetic moment of TmIG film at low temperature. More importantly, a magnetoresistance (MR) curve with double switching is found, which has not been reported in this simple HM/FI bilayer, and the sign of this MR effect is sensitive to the angle between the magnetic field and current directions. Our findings of these effects in this HM/rare earth iron garnet (HM/REIG) bilayer provide insights into tuning the spin transport properties of HM/REIG by changing the rare earth.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationElectronics (Switzerland), Aug. 2025, v. 14, no. 15, 3060en_US
dcterms.isPartOfElectronics (Switzerland)en_US
dcterms.issued2025-08-
dc.identifier.eissn2079-9292en_US
dc.identifier.artn3060en_US
dc.description.validate202508 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumbera3964-
dc.identifier.SubFormID51841-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe Hong Kong Polytechnic Universityen_US
dc.description.fundingTextShenzhen Science and Techonology Programmeen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryCCen_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
electronics-14-03060.pdf1.95 MBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.