Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/114052
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorSchool of Professional Education and Executive Development-
dc.contributorDepartment of Mechanical Engineering-
dc.creatorChen, Y-
dc.creatorYang, Y-
dc.creatorLiu, S-
dc.creatorLan, Z-
dc.creatorLiang, S-
dc.creatorZhu, J-
dc.creatorSu, Z-
dc.date.accessioned2025-07-10T06:21:45Z-
dc.date.available2025-07-10T06:21:45Z-
dc.identifier.issn2331-7019-
dc.identifier.urihttp://hdl.handle.net/10397/114052-
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.rights© 2025 American Physical Societyen_US
dc.rightsThe following publication Chen, Y., Yang, Y., Liu, S., Lan, Z., Liang, S., Zhu, J., & Su, Z. (2025). Topology optimization empowered dual-band second-order photonic topological insulators. Physical Review Applied, 23(4), 044048 is available at https://doi.org/10.1103/PhysRevApplied.23.044048.en_US
dc.titleTopology optimization empowered dual-band second-order photonic topological insulatorsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume23-
dc.identifier.issue4-
dc.identifier.doi10.1103/PhysRevApplied.23.044048-
dcterms.abstractDual-band second-order photonic topological insulators (SPTIs), characterized by multiple corner states, offer exceptional potential for robust multiband manipulation of electromagnetic waves in lower dimensions. However, previous theoretical implementations of dual-band SPTIs have been constrained by limited flexibility, hindering their adaptability for diverse applications. Additionally, experimental validation of these dual-band SPTIs has been lacking. In this study, we introduce a topology optimization method to design SPTIs with customizable dual-band corner states tailored for specific multiband applications. Dual-band SPTIs with customized corner states for manipulating electromagnetic waves of transverse magnetic and electric modes are created. Furthermore, multiple corner states within dual bandgaps are experimentally confirmed. This work opens new avenues for creating customizable photonic devices with dual-band topological features, enabling versatile multiband applications.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationPhysical review applied, Apr. 2025, v. 23, no. 4, 044048-
dcterms.isPartOfPhysical review applied-
dcterms.issued2025-04-
dc.identifier.scopus2-s2.0-105003590752-
dc.identifier.artn44048-
dc.description.validate202507 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumbera3847-n09en_US
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe National Natural Science Foundation of China (Grants No. 92263208 and No. 12102134)en_US
dc.description.fundingTextThe Fundamental Research Funds for the Central Universities (Grant No. 2023ZDYQ11003)en_US
dc.description.fundingTextThe State Key Laboratory of Millimeter Waves (Grant No. K202407)en_US
dc.description.fundingTextThe Hong Kong Innovation and Technology Commission via project “Smart Railway Technology and Applications” (Grant No. KBBY1)en_US
dc.description.fundingTextThe Faculty Development Scheme (FDS) RGC Project (Grant No. UGC/FDS24/E04/21)en_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
PhysRevApplied.23.044048.pdf3.79 MBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

SCOPUSTM   
Citations

1
Citations as of Dec 19, 2025

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.