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http://hdl.handle.net/10397/113347
| Title: | Response to “Comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/ n-GaN Schottky contacts | Authors: | Wang, RX Xu, SJ Beling, CD Cheung, CK |
Issue Date: | 22-Jan-2007 | Source: | Applied physics letters, 22 Jan. 2007, v. 90, no. 4, 046102 | Publisher: | AIP Publishing LLC | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | DOI: | 10.1063/1.2435356 | Rights: | © 2007 American Institute of Physics This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in R. X. Wang, S. J. Xu, C. D. Beling, C. K. Cheung; Response to “Comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/ n-GaN Schottky contacts [Appl. Phys. Lett. 90, 046101 (2007)]”. Appl. Phys. Lett. 22 January 2007; 90 (4): 046102 and may be found at https://doi.org/10.1063/1.2435356. |
| Appears in Collections: | Journal/Magazine Article |
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|---|---|---|---|---|
| 046102_1_online.pdf | 841.95 kB | Adobe PDF | View/Open |
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