Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/113347
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dc.contributorSchool of Fashion and Textiles-
dc.creatorWang, RXen_US
dc.creatorXu, SJen_US
dc.creatorBeling, CDen_US
dc.creatorCheung, CKen_US
dc.date.accessioned2025-06-02T06:58:36Z-
dc.date.available2025-06-02T06:58:36Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/113347-
dc.language.isoenen_US
dc.publisherAIP Publishing LLCen_US
dc.rights© 2007 American Institute of Physicsen_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in R. X. Wang, S. J. Xu, C. D. Beling, C. K. Cheung; Response to “Comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/ n-GaN Schottky contacts [Appl. Phys. Lett. 90, 046101 (2007)]”. Appl. Phys. Lett. 22 January 2007; 90 (4): 046102 and may be found at https://doi.org/10.1063/1.2435356.en_US
dc.titleResponse to “Comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/ n-GaN Schottky contactsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume90en_US
dc.identifier.issue4en_US
dc.identifier.doi10.1063/1.2435356en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 22 Jan. 2007, v. 90, no. 4, 046102en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2007-01-22-
dc.identifier.scopus2-s2.0-33846623829-
dc.identifier.eissn1077-3118en_US
dc.identifier.artn046102en_US
dc.description.validate202506 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Others-
dc.description.fundingSourceSelf-fundeden_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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