Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/111225
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dc.contributorDepartment of Applied Physics-
dc.creatorLiu, WCen_US
dc.creatorHoffman, Gen_US
dc.creatorZhou, Wen_US
dc.creatorReano, RMen_US
dc.creatorBoolchand, Pen_US
dc.creatorSooryakumar, Ren_US
dc.date.accessioned2025-02-17T01:38:08Z-
dc.date.available2025-02-17T01:38:08Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/111225-
dc.language.isoenen_US
dc.publisherAIP Publishing LLCen_US
dc.rights© 2008 American Institute of Physics.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Liu, W. C., Hoffman, G., Zhou, W., Reano, R. M., Boolchand, P., & Sooryakumar, R. (2008). Slab waveguides and nanoscale patterning of pulsed laser-deposited Ge0.2Se0.8 chalcogenide films. Applied Physics Letters, 93(4) and may be found at https://doi.org/10.1063/1.2965124.en_US
dc.titleSlab waveguides and nanoscale patterning of pulsed laser-deposited Ge₀.₂Se₀.₈ chalcogenide filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage041107-1en_US
dc.identifier.epage041107-3en_US
dc.identifier.volume93en_US
dc.identifier.issue4en_US
dc.identifier.doi10.1063/1.2965124en_US
dcterms.abstractPlanar slab waveguides were fabricated by pulsed laser deposition from GexSe1−x glass compounds with composition x 0.2 that lies very close to the floppy to rigid stiffness transition. These high quality active structures, which were deposited on SiO2 cladding layers above silicon substrates, support several transverse-electric TE modes, and a loss of 0.24 dB/cm for the TE0 mode was measured at 632.8 nm wavelength. The ability to exploit electron beam writing at these special Ge in Se compositions to create nanoscale surface motifs are promising advances to create unique miniature optical processing devices.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 28 July 2008, v. 93, no. 4, 041107, p. 041107-1 - 041107-3en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2008-07-28-
dc.identifier.scopus2-s2.0-49149108902-
dc.identifier.eissn1077-3118en_US
dc.identifier.artn041107en_US
dc.description.validate202502 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Others-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNSF; ECCS; DMRen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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