Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/111225
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Department of Applied Physics | - |
| dc.creator | Liu, WC | en_US |
| dc.creator | Hoffman, G | en_US |
| dc.creator | Zhou, W | en_US |
| dc.creator | Reano, RM | en_US |
| dc.creator | Boolchand, P | en_US |
| dc.creator | Sooryakumar, R | en_US |
| dc.date.accessioned | 2025-02-17T01:38:08Z | - |
| dc.date.available | 2025-02-17T01:38:08Z | - |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10397/111225 | - |
| dc.language.iso | en | en_US |
| dc.publisher | AIP Publishing LLC | en_US |
| dc.rights | © 2008 American Institute of Physics. | en_US |
| dc.rights | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Liu, W. C., Hoffman, G., Zhou, W., Reano, R. M., Boolchand, P., & Sooryakumar, R. (2008). Slab waveguides and nanoscale patterning of pulsed laser-deposited Ge0.2Se0.8 chalcogenide films. Applied Physics Letters, 93(4) and may be found at https://doi.org/10.1063/1.2965124. | en_US |
| dc.title | Slab waveguides and nanoscale patterning of pulsed laser-deposited Ge₀.₂Se₀.₈ chalcogenide films | en_US |
| dc.type | Journal/Magazine Article | en_US |
| dc.identifier.spage | 041107-1 | en_US |
| dc.identifier.epage | 041107-3 | en_US |
| dc.identifier.volume | 93 | en_US |
| dc.identifier.issue | 4 | en_US |
| dc.identifier.doi | 10.1063/1.2965124 | en_US |
| dcterms.abstract | Planar slab waveguides were fabricated by pulsed laser deposition from GexSe1−x glass compounds with composition x 0.2 that lies very close to the floppy to rigid stiffness transition. These high quality active structures, which were deposited on SiO2 cladding layers above silicon substrates, support several transverse-electric TE modes, and a loss of 0.24 dB/cm for the TE0 mode was measured at 632.8 nm wavelength. The ability to exploit electron beam writing at these special Ge in Se compositions to create nanoscale surface motifs are promising advances to create unique miniature optical processing devices. | - |
| dcterms.accessRights | open access | en_US |
| dcterms.bibliographicCitation | Applied physics letters, 28 July 2008, v. 93, no. 4, 041107, p. 041107-1 - 041107-3 | en_US |
| dcterms.isPartOf | Applied physics letters | en_US |
| dcterms.issued | 2008-07-28 | - |
| dc.identifier.scopus | 2-s2.0-49149108902 | - |
| dc.identifier.eissn | 1077-3118 | en_US |
| dc.identifier.artn | 041107 | en_US |
| dc.description.validate | 202502 bcch | - |
| dc.description.oa | Version of Record | en_US |
| dc.identifier.FolderNumber | OA_Others | - |
| dc.description.fundingSource | Others | en_US |
| dc.description.fundingText | NSF; ECCS; DMR | en_US |
| dc.description.pubStatus | Published | en_US |
| dc.description.oaCategory | VoR allowed | en_US |
| Appears in Collections: | Journal/Magazine Article | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 041107_1_online.pdf | 820.78 kB | Adobe PDF | View/Open |
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