Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/111103
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorChen, Hen_US
dc.creatorLiu, Zen_US
dc.creatorTian, Gen_US
dc.creatorWang, Gen_US
dc.creatorGuo, Yen_US
dc.creatorDuan, Zen_US
dc.creatorWu, Den_US
dc.creatorDeng, Yen_US
dc.creatorWang, Gen_US
dc.creatorHou, Zen_US
dc.creatorChen, Den_US
dc.creatorFan, Zen_US
dc.creatorQin, Men_US
dc.creatorDai, JYen_US
dc.creatorLiu, JMen_US
dc.creatorGao, Xen_US
dc.date.accessioned2025-02-17T01:37:22Z-
dc.date.available2025-02-17T01:37:22Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/111103-
dc.language.isoenen_US
dc.publisherAIP Publishing LLCen_US
dc.rights© 2024 Author(s). Published under an exclusive license by AIP Publishing.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Hongying Chen, Zhiyu Liu, Guo Tian, Gui Wang, Yihang Guo, Zongwen Duan, Di Wu, Yu Deng, Guoyu Wang, Zhipeng Hou, Deyang Chen, Zhen Fan, Minghui Qin, Ji-Yan Dai, Jun-Ming Liu, Xingsen Gao; Tunable topological domain structures in high-density PbTiO3 nanodots array. Appl. Phys. Lett. 24 June 2024; 124 (26): 262901 and may be found at https://doi.org/10.1063/5.0213936.en_US
dc.titleTunable topological domain structures in high-density PbTiO₃ nanodots arrayen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage262901-1en_US
dc.identifier.epage262901-7en_US
dc.identifier.volume124en_US
dc.identifier.issue26en_US
dc.identifier.doi10.1063/5.0213936en_US
dcterms.abstractIn this work, we demonstrated that tunable topological domain structures, e.g., center-type domains and skyrmion-like polar bubbles, can be generated at room temperature in high-density epitaxial PbTiO3 nanodots fabricated via the template-assisted tailoring of thin films. These topological domain structures can be manipulated electrically by applying an appropriate bias on the conductive atomic force microscopy tip, allowing for writing, erasing, and rewriting of topological domains into the nanodot. Moreover, ring-shaped conductive channels are observed around the center-type domain states. These findings provide a playground for further exploring their emerging functionalities and application potentials for nanoelectronics.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 24 June 2024, v. 124, no. 26, 262901, p. 262901-1 - 262901-7en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2024-06-24-
dc.identifier.scopus2-s2.0-85197883962-
dc.identifier.eissn1077-3118en_US
dc.identifier.artn262901en_US
dc.description.validate202502 bcchen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Others-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNational Natural Science Foundation of China; National Key Research and Development Programs of China; Guangdong Basic and Applied Basic Research Foundation; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology; Science and Technology Projects in Guangzhou; Hong Kong Scholar Programen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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